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Researcher profile

Daria Pankratova

Daria Pankratova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2024arXiv

Enhanced Thermoelectric Properties By Embedding Fe Nanoparticles Into CrN Films For Energy Harvesting Applications

Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the Fe nanoparticles remained intact without intermixing with the matrix. The electrical and thermal transport properties of the nanocomposites were investigated and compared to a monolithic CrN film. The measured thermoelectric properties revealed an increase in the Seebeck coefficient, with a decrease of hall carrier concentration and an increase of the electron mobility which could be explained by energy filtering by internal phases created at the NP/matrix interface. The thermal conductivity of the final nanocomposite was reduced from 4.8 W m-1K-1 to a minimum of 3.0 W m-1K-1 W. This study shows prospects for the nanocomposite synthesis process using nanoparticles and its use in improving the thermoelectric properties of coatings.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Influence of Bi substitution with rare-earth elements on the transport properties of BiCuSeO oxyselenides

In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the charge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$ substitution, the electronic transport properties are significantly improved in a broad temperature range from 100 K to 800 K. In particular, the electrical resistivity decreases by two times, while the Seebeck coefficient drops from 323 $μ$V K$^{-1}$ to 238 $μ$V K$^{-1}$ at 800 K. Thus, a power factor of nearly 3 $μ$W cm$^{-1}$ K$^{-2}$ is achieved for Bi$_{0.92}$La$_{0.08}$CuSeO sample at 800 K. Meanwhile, a noticeable decrease of the lattice thermal conductivity is observed for the substituted samples, which can be attributed to the enhanced point defect scattering mostly originated from atomic mass fluctuations between $R$ and Bi. Ultimately, a maximum $zT$ value of nearly 0.34 at 800 K is obtained for the Bi$_{0.92}$La$_{0.08}$CuSeO sample, which is ~30% higher than that of pristine BiCuSeO.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering

Among layered oxygen-containing compounds, BiCuSeO is one of the most promising candidates for thermoelectric applications due to its intrinsically low thermal conductivity and good thermal stability. However, the rather poor electrical conductivity of pristine BiCuSeO hinders its potential. Further enhancement of the thermoelectric performance by single doping at Bi site is limited mainly due to dramatic decrease of carrier mobility. Thus, new strategies, such as dual doping or doping with variable-valence elements seem to be promising. Along with that, the development of a fast and scalable synthesis route is essential for the industrial-scale fabrication of thermoelectric materials. Hence, in this paper, Bi$_{1-x}$Sm$_{x}$CuSeO samples (0 $\leq$ $x$ $\leq$ 0.08) have been synthesized with a simple and scalable reactive sintering process. For comparison, Bi$_{1-x}$Sm$_{x}$CuSeO oxyselenides were also obtained by the conventional solid-state route. Our results highlight that, Sm for Bi substitution increases the electrical conductivity by 1.5 - 2 times and decreases the Seebeck coefficient by ~1.4 times at 873 K for both series. Overall, considering the increase of lattice thermal conductivity upon doping and not optimized power factor, the figure of merit $zT$ is reducing upon doping.

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