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Researcher profile

Daniel S. P. Tanner

Daniel S. P. Tanner contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Divergent electrostriction at ferroelectric phase transitions: example of strain-induced ferroelectiricty in KTaO3

We investigate the electrostrictive response across a ferroelectric phase transition from first-principles calculations and refute the prevailing view of constant electrostriction across the ferroelectric phase boundary. We take as a case study the epitaxial strain-induced transition from para- to feroelectricity of \ce{KTaO3}. We show that the magnitude of the electrostriction diverges with the permitivity at the transition, hence exhibiting giant responses through a calculation of both the M and Q electrostrictive tensors. We explain the origin of this giant electrostrictive response in \ce{KTaO3} using a microscopic decomposition of the electrostriction coefficients, and use this understanding to propose design rules for the development of future giant electrostrictors for electromechanical applications. Finally, we introduce a further means to calculate electrostriction, specific to ferroelectrics, and not yet utilised in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optimized methodology for the calculation of electrostriction from first-principles

In this work we present a new method for the calculation of the electrostrictive properties of materials using density functional theory. The method relies on the thermodynamical equivalence, in a dielectric, of the quadratic mechanical responses (stress or strain) to applied electric stimulus (electric or polarisation fields) to the strain or stress dependence of its dielectric susceptibility or stiffness tensors. Comparing with current finite-field methodologies for the calculation of electrostriction, we demonstrate that our presented methodology offers significant advantages of efficiency, robustness, and ease of use. These advantages render tractable the highthroughput theoretical investigation into the largely unknown electrostrictive properties of materials.

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preprint2020arXiv

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of InGaN quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; i.e. when the internal quantum efficiency and wall plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy induced localization effects change weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared to that of the holes, and changes little in the In composition range of interest for the green gap problem. Thus electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative recombination rate may increase.

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preprint2019arXiv

Electronic structure evolution in dilute carbide Ge$_{1-x}$C$_{x}$ alloys and implications for device applications

We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge$_{1-x}$C$_{x}$. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB) structure by driving hybridisation of $A_{1}$-symmetric linear combinations of Ge states lying close in energy to the CB edge. This leads, in the ultra-dilute limit, to the alloy CB edge being formed primarily of an $A_{1}$-symmetric linear combination of the L-point CB edge states of the Ge host matrix semiconductor. Our calculations describe the emergence of a "quasi-direct" alloy band gap, which retains a significant admixture of indirect Ge L-point CB edge character. We then analyse the evolution of the electronic structure of realistic (large, disordered) Ge$_{1-x}$C$_{x}$ alloy supercells for C compositions up to $x = 2$%. We show that short-range alloy disorder introduces a distribution of localised states at energies below the Ge CB edge, with these states acquiring minimal direct ($Γ$) character. Our calculations demonstrate strong intrinsic inhomogeneous energy broadening of the CB edge Bloch character, driven by hybridisation between Ge host matrix and C-related localised states. The trends identified by our calculations are markedly different to those expected based on a recently proposed interpretation of the CB structure based on the band anti-crossing model. The implications of our findings for device applications are discussed.

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