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Daniel Miravet

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Published work

2 published item(s)

preprint2021arXiv

Ballistic-like Space-charge-limited Currents in Halide Perovskites at Room Temperature

The emergence of halide perovskites in photovoltaics has diversified the research on this material family and extended their application towards several fields in the optoelectronics, such as photo- and ionizing-radiation-detectors. One of the most basic characterization protocols consist on measuring the dark current-voltage (J-V) curve of symmetrically contacted samples for identifying the different regimes of space-charge-limited current (SCLC). Customarily, J=C*V^n curves indicate the Mott-Gurney law when n=2, or the Child-Langmuir ballistic regime of SCLC when n=3/2. The latter can be often found in perovskite samples. In this work, we start by discussing the interpretation of currents proportional to V^(3/2) in relation to the masking effect of the dual electronic-ionic conductivity in halide perovskites. However, we do not discard the actual occurrence of SCLC transport with ballistic-like trends. For those cases, we introduce the models of: quasi-ballistic velocity-dependent dissipation (QvD) and the ballistic-like voltage-dependent mobility (BVM) regime of SCLC. The QvD model is shown to better describe electronic kinetics, whereas the BVM model is revealed as suitable for describing electronic or ionic kinetics in halide perovskites. The proposed formulations can be used as characterization tools for the evaluation of effective mobilities, charge carrier concentrations and times-of-flight from J-V curves and impedance spectroscopy spectra.

preprint2019arXiv

Analytical Model for Light Modulating Impedance Spectroscopy (LIMIS) in All-Solid-State p-n Junction Solar Cells at Open-Circuit

Non-circuit theory drift-diffusion numerical simulation of standard potentiostatic impedance spectroscopy (IS) is a well-known strategy for characterization of materials and electronic devices. It implies the time-dependent solutions from the continuity and Poisson's equations under small perturbation of the bias boundary condition at the electrodes. But in the case of photo-sensitive devices a small light perturbation can be also taken modulating the generation rate along the absorber bulk. In that focus, this work approaches a set of analytical solutions for the signals of IS and intensity modulated photocurrent and photovoltage spectroscopies, IMPS and IMVS respectively, from one-sided p-n junction solar cells at open-circuit. Subsequently, a photo-impedance signal named light intensity modulated impedance spectroscopy (LIMIS equals IMVS over IMPS) is analytically simulated and its difference with respect to IS suggests a correlation with the surface charge carrier recombination velocity. This is an illustrative result and starting point for future more realistic numerical simulations.