Researcher profile

Daniel Massatt

Daniel Massatt contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Multiscale Invariants of Floquet Topological Insulators

This paper analyzes Floquet topological insulators resulting from the time-harmonic irradiation of electromagnetic waves on two dimensional materials such as graphene. We analyze the bulk and edge topologies of approximations to the evolution of the light-matter interaction. Topologically protected interface states are created by spatial modulations of the drive polarization across an interface. In the high-frequency modulation regime, we obtain a sequence of topologies that apply to different time scales. Bulk-difference invariants are computed in detail and a bulk-interface correspondence is shown to apply. We also analyze a high-frequency high-amplitude modulation resulting in a large-gap effective topology topologically that remains valid only for moderately long times.

preprint2020arXiv

Duality between atomic configurations and Bloch states in twistronic materials

The relative orientation (twist) of successive layers of stacked two-dimensional (2D) materials creates variations in the interlayer atomic registry. The variations often form a super lattice, called a moiré pattern, which can alter electronic properties. In this work we introduce a classification of the single-particle electronic structures that can occur in twisted stacks of 2D layers by characterizing them as "moiré molecules" or "moiré crystals". The molecules generate localized electronic states and moiré flat bands, while the crystals are sometimes unconventional and produce electronic banding in the configuration basis. The underpinning of this classification is the duality between interlayer configuration and monolayer Bloch momentum in moiré Hamiltonians. We apply this understanding to diagrams of local electron density in untwisted geometries to produce intuitive and quantitative predictions of twistronic properties. We provide a conceptual introduction to this framework through a one-dimensional model, and then apply it to 2D twisted bilayers of the semi-metal graphene, and of MoS$_2$, a representative material of the transition metal dichalcogenide (TMDC) family of semiconductors. This level of thorough understanding of twistronic phenomena is vital in the search for new material platforms for localized moiré electrons.

preprint2019arXiv

Efficient Computation of Kubo Conductivity for Incommensurate 2D Heterostructures

Here we introduce a numerical method for computing conductivity via the Kubo Formula for incommensurate 2D bilayer heterostructures using a tight-binding framework. We begin with deriving the momentum space formulation and Kubo Formula from the real space tight-binding model using the appropriate Bloch transformation operator. We further discuss the resulting algorithm along with its convergence rate and computation cost in terms of parameters such as relaxation time and temperature. In particular, we show that for low frequencies, low temperature, and long relaxation times conductivity can be computed very efficiently using momentum space for a wide class of materials. We then demonstrate our method by computing conductivity for twisted bilayer graphene (tBLG) for small twist angles.