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Researcher profile

Damien Faurie

Damien Faurie contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2014arXiv

Magnetic domain-wall motion study under an electric field in a Finemet thin film on flexible substrate

Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using a digital image correlation technique. MFM images at remanence (H=0 Oe and U=0 V) clearly reveal the presence of weak stripe domains. The effect of the voltage-induced strain shows the existence of a threshold value above, which the break of the stripe configuration set in. For a maximum strain of exx~0.5*10-3 we succeed in destabilizing the stripes configuration helping the setting up of a complete homogeneous magnetic pattern.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Voltage-induced strain control of the magnetic anisotropy in a Ni thin film on flexible substrate

Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which the film/substrate system was glued. In our work, the control of the anisotropy through the applied elastic strains is facilitated by the compliant elastic behavior of the substrate. The in-plane strains in the film induced by the piezoelectric actuation have been measured by the digital image correlation technique. Non-linear variation of the resonance field as function of the applied voltage is found and well reproduced by taking into account the non linear and hysteretic variations of the induced in-plane strains as function of the applied voltage. Moreover, we show that initial uniaxial anisotropy attributed to compliant substrate curvature is fully compensated by the voltage induced anisotropy.

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preprint2011arXiv

Structural and magnetic properties of Co2MnSi thin films

Co2MnSi (CMS) films of different thicknesses (20, 50 and 100 nm) were grown by radio frequency (RF) sputtering on a-plane sapphire substrates. Our X-rays diffraction study shows that, in all the samples, the cubic <110> CSM axis is normal to the substrate and that there exist well defined preferential in-plane orientations. Static and dynamic magnetic properties were investigated using vibrating sample magnetometry (VSM) and micro-strip line ferromagnetic resonance (MS-FMR), respectively. From the resonance measurements versus the direction and the amplitude of an applied magnetic field we derive most of the magnetic parameters: magnetization, gyromagnetic factor, exchange stiffness coefficient and magnetic anisotropy terms. The in-plane anisotropy can be described as resulting from the superposition of two terms showing a two-fold and a four-fold symmetry without necessarily identical principal axes. The observed behavior of the hysteresis loops is in agreement with this complex form of the in-plane anisotropy

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preprint2010arXiv

Structural, static and dynamic magnetic properties of CoMnGe thin films on a sapphire a-plane substrate

Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400°C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and conventional or micro-strip line (MS) ferromagnetic resonance (FMR). Their behavior is described assuming a magnetic energy density showing twofold and fourfold in-plane anisotropies with some misalignment between their principal directions. For all the samples, the easy axis of the fourfold anisotropy is parallel to the c-axis of the substrate while the direction of the twofold anisotropy easy axis varies from sample to sample and seems to be strongly influenced by the growth conditions. Its direction is most probably monitored by the slight unavoidable angle of miscut the Al2O3 substrate. The twofold in-plane anisotropy field is almost temperature independent, in contrast with the fourfold field which is a decreasing function of the temperature. Finally, we study the frequency dependence of the observed line-width of the resonant mode and we conclude to a typical Gilbert damping constant of 0.0065 for the 55-nm-thick film.

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