Source author record

Damien Faurie

Damien Faurie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

7works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2014arXiv

Combining ferromagnetic resonator and digital image correlation to study the strain induced resonance tunability in magnetoelectric heterostructures

This paper reports the development of a methodology combining microstrip ferromagnetic resonance (MS-FMR) and digital image correlation (DIC) in order to silmuteanously measure the voltage-induced strains and the magnetic resonance in artificial magnetoelectric heterostructures (magnetic films/piezoelectric substrate? or magnetic films/flexible substrate/piezoelectric actuator ?). The overall principle of the technique and the related analytical modelling are described. It is powerful to estimate the magnetostriction coefficient of ferromagnetic thin films and can be used to determine the effective magnetoelectric coefficient of the whole heterostructures in addition to the piezoelectric coefficient related to the in-plane voltage-induced strains. This methodology can be applied to system for which the strains are well transmitted at the different interfaces.

preprint2014arXiv

Magnetic domain-wall motion study under an electric field in a Finemet thin film on flexible substrate

Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using a digital image correlation technique. MFM images at remanence (H=0 Oe and U=0 V) clearly reveal the presence of weak stripe domains. The effect of the voltage-induced strain shows the existence of a threshold value above, which the break of the stripe configuration set in. For a maximum strain of exx~0.5*10-3 we succeed in destabilizing the stripes configuration helping the setting up of a complete homogeneous magnetic pattern.

preprint2014arXiv

Micro-strip ferromagnetic resonance study of strain-induced anisotropy in amorphous FeCuNbSiB film on flexible substrate

The magnetic anisotropy of a FeCuNbSiB (Finemet) film deposited on Kapton has been studied by micro-strip ferromagnetic resonance technique. We have shown that the flexibility of the substrate allows a good transmission of elastic strains generated by a piezoelectric actuator. Following the resonance field angular dependence, we also demonstrate the possibility of controlling the magnetic anisotropy of the film by applying relatively small voltages to the actuator. Moreover, a suitable model taking into account the effective elastic strains measured by digital image correlation and the effective elastic coefficients measured by Brillouin light scattering, allowed to deduce the magnetostrictive coefficient. This latter was found to be positive $(λ=16\times10^{-6}$) and consistent with the usually reported values for bulk amorphous FeCuNbSiB.

preprint2014arXiv

Optimization of indirect magnetoelectric effect in thin-film/substrate/piezoelectric-actuator heterostructure using polymer substrate

Indirect magnetoelectric effect has been studied in magnetostrictive-film/substrate/piezoelectric-actuator heterostructures. Two different substrates have been employed: a flexible substrate (Young's modulus of 4 GPa) and a rigid one (Young's modulus of 180 GPa). A clear optimization of the indirect magnetoelectric coupling, studied by micro-strip ferromagnetic resonance, has been highlighted when using the polymer substrate. However, in contrast to the rigid substrate, the flexible substrate also leads to an a priori undesirable and huge uniaxial anisotropy which seems to be related to a non equibiaxial residual stress inside the magnetostrictive film. The strong amplitude of this non equibiaxiallity is due to the large Young's modulus mismatch between the polymer and the magnetostrictive film which leads to a slight curvature along a given direction during the elaboration process and thus to a large magnetoelastic anisotropy.

preprint2013arXiv

Voltage-induced strain control of the magnetic anisotropy in a Ni thin film on flexible substrate

Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which the film/substrate system was glued. In our work, the control of the anisotropy through the applied elastic strains is facilitated by the compliant elastic behavior of the substrate. The in-plane strains in the film induced by the piezoelectric actuation have been measured by the digital image correlation technique. Non-linear variation of the resonance field as function of the applied voltage is found and well reproduced by taking into account the non linear and hysteretic variations of the induced in-plane strains as function of the applied voltage. Moreover, we show that initial uniaxial anisotropy attributed to compliant substrate curvature is fully compensated by the voltage induced anisotropy.

preprint2011arXiv

Structural and magnetic properties of Co2MnSi thin films

Co2MnSi (CMS) films of different thicknesses (20, 50 and 100 nm) were grown by radio frequency (RF) sputtering on a-plane sapphire substrates. Our X-rays diffraction study shows that, in all the samples, the cubic <110> CSM axis is normal to the substrate and that there exist well defined preferential in-plane orientations. Static and dynamic magnetic properties were investigated using vibrating sample magnetometry (VSM) and micro-strip line ferromagnetic resonance (MS-FMR), respectively. From the resonance measurements versus the direction and the amplitude of an applied magnetic field we derive most of the magnetic parameters: magnetization, gyromagnetic factor, exchange stiffness coefficient and magnetic anisotropy terms. The in-plane anisotropy can be described as resulting from the superposition of two terms showing a two-fold and a four-fold symmetry without necessarily identical principal axes. The observed behavior of the hysteresis loops is in agreement with this complex form of the in-plane anisotropy

preprint2010arXiv

Structural, static and dynamic magnetic properties of CoMnGe thin films on a sapphire a-plane substrate

Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400°C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and conventional or micro-strip line (MS) ferromagnetic resonance (FMR). Their behavior is described assuming a magnetic energy density showing twofold and fourfold in-plane anisotropies with some misalignment between their principal directions. For all the samples, the easy axis of the fourfold anisotropy is parallel to the c-axis of the substrate while the direction of the twofold anisotropy easy axis varies from sample to sample and seems to be strongly influenced by the growth conditions. Its direction is most probably monitored by the slight unavoidable angle of miscut the Al2O3 substrate. The twofold in-plane anisotropy field is almost temperature independent, in contrast with the fourfold field which is a decreasing function of the temperature. Finally, we study the frequency dependence of the observed line-width of the resonant mode and we conclude to a typical Gilbert damping constant of 0.0065 for the 55-nm-thick film.