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Dali Sun

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2020arXiv

Large spin to charge conversion in topological superconductor \b{eta}-PdBi2 at room temperature

\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on investigating its topological surface states, the coupling between spin and charge degrees of freedom in this class of quantum material remains unexplored. Here we first report a study of spin-to-charge conversion in a \b{eta}-PdBi2 ultrathin film grown by molecular beam epitaxy, utilizing a spin pumping technique to perform inverse spin Hall effect measurements. We find that the room temperature spin Hall angle of Fe/\b{eta}-PdBi2, θ_SH=0.037. This value is one order of magnitude larger than that of reported conventional superconductors, and is comparable to that of the best SOC metals and topological insulators. Our results provide an avenue for developing superconductor-based spintronic applications.

preprint2016arXiv

Spintronics of Organometal Trihalide Perovskites

The family of organometal trihalide perovskite (OTP), CH3NH3PbX3 (where X is halogen) has recently revolutionized the photovoltaics field and shows promise in a variety of optoelectronic applications. The characteristic spin properties of charge and neutral excitations in OTPs are influenced by the large spin-orbit coupling of the Pb atoms, which may lead to spin-based device applications. Here we report the first studies of pure spin-current and spin-aligned carrier injection in OTP spintronics devices using spin-pumping and spin-injection, respectively. We measure a relatively large inverse-spin-Hall effect using pulsed microwave excitation in OTP devices at resonance with a ferromagnetic substrate, from which we derive room temperature spin diffusion length, lambda_sd~9nm; and low-temperature giant magnetoresistance in OTP-based spin-valves from which we estimate lambda_sd~85nm.

preprint2015arXiv

Inverse Spin Hall Effect from pulsed Spin Current in Organic Semiconductors with Tunable Spin-Orbit Coupling

Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals using pulsed ferromagnetic resonance, where the ISHE is ~2-3 orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from pi-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the molecule surface curvature. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin-currents at room temperature, and paves the way for spin-orbitronics in plastic materials.

preprint2015arXiv

Structural, electronic, and magnetic properties of tris(8-hydroxyquinoline)iron(III) molecules and its magnetic coupling with ferromagnetic surface: first-principles study

Using first-principles calculations, we have systematically investigated the structural, electronic, and magnetic properties of facial (fac-) and meridional (mer-) tris(8-hydroxyquinoline)iron(III) (Feq3) molecules and their interaction with ferromagnetic substrate. Our calculation results show that for the isolated Feq3, mer-Feq3 is more stable than the fac-Feq3; and both Feq3 isomers have a high spin-state of 5 μB as the ground state when an on-site Hubbard-U term is included to treat the highly localized Fe 3d electrons; while the standard DFT calculations produce a low spin-state of 1 μB. These magnetic behaviors can be understood by the octahedral ligand field splitting theory. Furthermore, we found that fac-Feq3 has a stronger bonding to the Co surface than mer-Feq3 and an anti-ferromagnetic coupling was discovered between Fe and Co substrate, originating from the superexchange coupling between Fe and Co mediated by the interface oxygen and nitrogen atoms. These findings suggest that Feq3 molecular films may serve as a promising spin-filter material in spintronic devices.

preprint2014arXiv

Active control of magnetoresistance of organic spin valves using ferroelectricity

Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

preprint2013arXiv

Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition

An experimental study was conducted on controlling the growth mode of La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition (PLD) by tuning growth temperature, pressure and laser fluence. Different thin film morphology, crystallinity and stoichiometry have been observed depending on growth parameters. To understand the microscopic origin, the adatom nucleation, step advance processes and their relationship to film growth were theoretically analyzed and a growth diagram was constructed. Three boundaries between highly and poorly crystallized growth, 2D and 3D growth, stoichiometric and non-stoichiometric growth were identified in the growth diagram. A good fit of our experimental observation with the growth diagram was found. This case study demonstrates that a more comprehensive understanding of the growth mode in PLD is possible.