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Researcher profile

Daijiro Nozaki

Daijiro Nozaki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2014arXiv

Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance

Decoherent transport in mesoscopic and nanoscopic systems can be formulated in terms of the D'Amato-Pastawski (DP) model. This generalizes the Landauer-Büttiker picture by considering a distribution of local decoherent processes. However, its generalization for multi-terminal setups is lacking. We first review the original two-terminal DP model for decoherent transport. Then, we extend it to a matrix formulation capable of dealing with multi-terminal problems. We also introduce recursive algorithms to evaluate the Green's functions for general banded Hamiltonians as well as local density of states, effective conductances and voltage profiles. We finally illustrate the method by analyzing two problems of current relevance. 1) Assessing the role of decoherence in a model for phonon lasers (SASER). 2) Obtaining the classical limit of Giant Magnetoresistance from a spin-dependent Hamiltonian. The presented methods should pave the way for computationally demanding calculations of transport through nanodevices, bridging the gap between fully coherent quantum schemes and semiclassical ones.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Control of quantum interference in molecular junctions: Understanding the origin of Fano and anti- resonances

We investigate within a coarse-grained model the conditions leading to the appearance of Fano resonances or anti-resonances in the conductance spectrum of a generic molecular junction with a side group (T-junction). By introducing a simple graphical representation (parabolic diagram), we can easily visualize the relation between the different electronic parameters determining the regimes where Fano resonances or anti-resonances in the low-energy conductance spectrum can be expected. The results obtained within the coarse-grained model are validated using density-functional based quantum transport calculations in realistic T-shaped molecular junctions.

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preprint2012arXiv

Disorder and dephasing effect on electron transport through conjugated molecular wires in molecular junctions

Understanding electron transport processes in molecular wires connected between contacts is a central focus in the field of molecular electronics. Especially, the dephasing effect causing tunneling-to-hopping transition has great importance from both applicational and fundamental points of view. We analyzed coherent and incoherent electron transmission through conjugated molecular wires by means of density-functional tight-binding theory within the D'Amato-Pastawski model. Our approach can study explicitly the structure/transport relationship in molecular junctions in a dephasing environmental condition using only single dephasing parameter. We investigated the length dependence and the influence of thermal fluctuations on transport and reproduced the well-known tunneling-to-hopping transition. This approach will be a powerful tool for the interpretation of recent conductance measurements of molecular wires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.

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preprint2010arXiv

Controlling the conductance of molecular wires by defect engineering: a divide et impera approach

Understanding of charge transport mechanisms in nanoscale structures is essential for the development of molecular electronic devices. Charge transport through 1D molecular systems connected between two contacts is influenced by several parameters such as the electronic structure of the molecule and the presence of disorder and defects. In this work, we have modeled 1D molecular wires connected between electrodes and systematically investigated the influence of both soliton formation and the presence of defects on properties such as the conductance and the density of states. Our numerical calculations have shown that the transport properties are highly sensitive to the position of both solitons and defects. Interestingly, the introduction of a single defect in the molecular wire which divides it into two fragments both consisting of an odd number of sites creates a new conduction channel in the center of the band gap resulting in higher zero-bias conductance than for defect free systems. This phenomenon suggests alternative routes toward engineering molecular wires with enhanced conductance.

0 citations0 reviewsNo code linkedOpen access