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Researcher profile

Daehun Lee

Daehun Lee contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Nonvolatile Electric-Field Control of Inversion Symmetry

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.

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preprint2022arXiv

Observation of Gigahertz Topological Valley Hall Effect in Nanoelectromechanical Phononic Crystals

Topological phononics offers numerous opportunities in manipulating elastic waves that can propagate in solids without being backscattered. Due to the lack of nanoscale imaging tools that aid the system design, however, acoustic topological metamaterials have been mostly demonstrated in macroscale systems operating at low (kilohertz to megahertz) frequencies. Here, we report the realization of gigahertz topological valley Hall effect in nanoelectromechanical AlN membranes. Propagation of elastic wave through phononic crystals is directly visualized by microwave microscopy with unprecedented sensitivity and spatial resolution. The valley Hall edge states, protected by band topology, are vividly seen in both real- and momentum-space. The robust valley-polarized transport is evident from the wave transmission across local disorder and around sharp corners, as well as the power distribution into multiple edge channels. Our work paves the way to exploit topological physics in integrated acousto-electronic systems for classical and quantum information processing in the microwave regime.

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preprint2021arXiv

Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.

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