Source author record

D. Z. Yang

D. Z. Yang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci physics.comp-ph

Catalog footprint

What is connected

4works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2015arXiv

Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.

preprint2015arXiv

Negative Poisson's ratios in few-layer orthorhombic arsenic from first-principles calculations

A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be around -0.09, originated from the hinge-like structure within the single layer of arsenic. When the layer increases, the negative Poisson's ratio becomes more negative and finally approaches the limit at four-layer, which is very close to the bulk's value of -0.12. The underlying mechanism is proposed for this layer-dependent negative Poisson's ratio, where the internal bond lengths as well as the normal Poisson's ratio within layer play a key role. The study like ours sheds new light on the physics of negative Poisson's ratio in those hinge-like nano-materials.

preprint2014arXiv

A theoretical study of blue phosphorene nanoribbons based on first-principles calculations

Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the width decreases to about 10 ang. The underlying physics is ascribed to the quantum confinement. More importantly, the quantum confinement parameters are obtained by fitting the calculated gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the energy gap in BPNRs.

preprint2012arXiv

Training and recovery behaviours of exchange bias in FeNi/Cu/Co/FeMn spin valves at high field sweep rates

Training and recovery of exchange bias in FeNi/Cu/Co/FeMn spin valves have been studied by magnetoresistance curves with field sweep rates from 1000 to 4800 Oe/s. It is found that training and recovery of exchange field are proportional to the logarithm of the training cycles and recovery time, respectively. These behaviours are explained within the model based on thermal activation. For the field sweep rates of 1000, 2000 and 4000 Oe/s, the relaxation time of antiferromagnet spins are 61.4, 27.6, and 11.5 in the unit of $ms$ respectively, much shorter than the long relaxation time (~10^2 s) in conventional magnetometry measurements.