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D. Scott Katzer

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph quant-ph

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preprint2022arXiv

Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy

We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density functional theory and the Boltzmann transport equation for thermal conductivity calculations, and the diffuse mismatch model for TBC predictions. The experimental thermal conductivities were approximately 3 times smaller than those calculated for perfect Ga2O3 crystals of similar size. When considering the presence of grain boundaries, gallium and oxygen vacancies, and stacking faults in the calculations, the crystals that present around 1% of gallium vacancies and a density of stacking faults of 106 faults/cm were the ones whose thermal conductivities were closer to the experimental results. Our analysis suggests the level of different types of defects present in the Ga2O3 crystal that could be used to improve the quality of MBE-grown samples by reducing these defects and thereby produce materials with higher thermal conductivities.

preprint2020arXiv

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.

preprint2016arXiv

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

preprint2015arXiv

Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from surface and interface trapped charge. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing HVPE GaN substrates where 300 nm long recessed and non-recessed gate HEMTs were fabricated. The recessed-gate HEMT demonstrated a gate lag ratio (GLR) of 0.88 with no collapse in drain current and supporting small signal metrics $f_t/f_{max}$ of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with $f_t/f_{max}$ of 48/60 GHz.