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Source author record

D. Rüffer

D. Rüffer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

5 published item(s)

preprint2015arXiv

Dynamic cantilever magnetometry of individual CoFeB nanotubes

We investigate single CoFeB nanotubes with hexagonal cross-section using dynamic cantilever magnetometry (DCM). We develop both an analytical model based on the Stoner-Wohlfarth approximation and a broadly applicable numerical framework for analyzing DCM measurements of magnetic nanostructures. Magnetometry data show the presence of a uniformly magnetized configuration at high external fields with $μ_0 M_s =1.3 \pm 0.1$ T and non-uniform configurations at low fields. In this low-field regime, comparison between numerical simulations and DCM measurements supports the existence of flux-closure configurations. Crucially, evidence of such configurations is only apparent because of the sensitivity of DCM to single nanotubes, whereas conventional measurements of ensembles are often obscured by sample-to-sample inhomogeneities in size, shape, and orientation

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the nonlinearity can be used to amplify a signal at a frequency close to the mechanical resonance of the nanowire oscillator. Up to 26 dB of amplitude gain are demonstrated in this way.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanoscale multifunctional sensor formed by a Ni nanotube and a scanning Nb nanoSQUID

Nanoscale magnets might form the building blocks of next generation memories. To explore their functionality, magnetic sensing at the nanoscale is key. We present a multifunctional combination of a scanning nanometer-sized superconducting quantum interference device (nanoSQUID) and a Ni nanotube attached to an ultrasoft cantilever as a magnetic tip. We map out and analyze the magnetic coupling between the Ni tube and the Nb nanoSQUID, demonstrate imaging of an Abrikosov vortex trapped in the SQUID structure - which is important in ruling out spurious magnetic signals - and reveal the high potential of the nanoSQUID as an ultrasensitive displacement detector. Our results open a new avenue for fundamental studies of nanoscale magnetism and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reversal mechanism of an individual Ni nanotube simultaneously studied by torque and SQUID magnetometry

Using an optimally coupled nanometer-scale superconducting quantum interference device, we measure the magnetic flux originating from an individual ferromagnetic Ni nanotube attached to a Si cantilever. At the same time, we detect the nanotube's volume magnetization using torque magnetometry. We observe both the predicted reversible and irreversible reversal processes. A detailed comparison with micromagnetic simulations suggests that vortex-like states are formed in different segments of the individual nanotube. Such stray-field free states are interesting for memory applications and non-invasive sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Untangling the role of oxide in Ga-assisted growth of GaAs nanowires on Si substrates

The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperature and Ga rate are needed for successful nanowire growth on different oxides. We generalize the results in terms of the characteristics of the oxides such as surface roughness, stoichiometry and thickness. These results constitute a step further towards the integration of GaAs technology on the Si platform.

0 citations0 reviewsNo code linkedOpen access