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D. Rideau

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

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2 publications

preprint2015arXiv

Remote Surface Roughness Scattering in FDSOI devices with high-κκ/SiO2_2 gate stacks

We investigate remote surface scattering (RSR) by the SiO2_2/HfO2_2 interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2_2 and SiO2_2/HfO2_2 interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2_2 interface and SiO2_2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-κκ/Metal gate technologies.

Open access
preprint2009arXiv

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few additional parameters and is free from any ambiguities that might arise from the definition of the macroscopic strains as a function of the atomic positions. We apply this model to silicon, germanium and their alloys as an illustration. In particular, we make a detailed comparison of tight-binding and ab initio data on strained Si, Ge and SiGe.

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