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D. P. Żebrowski

D. P. Żebrowski contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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preprint2016arXiv

Spin transitions driven by electric dipole spin resonance in fluorinated single- and bilayer-graphene quantum dots

Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene are considered as well as electrostatic electron traps induced in bilayer graphene. The stationary states are obtained within the tight-binding approach and are used to the basis of eigenstates to describe the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. Moreover, the spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the experimental spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.

preprint2015arXiv

Charging graphene nanoribbon quantum dots

We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a mean field local spin density approximation. The numerical approach accounts for the charge of all the $p_z$ electrons and screening of external potentials by states near the charge neutrality point. Both a homogenous ribbon and a graphene flake embedded within the ribbon are discussed. The formation of transport gaps as functions of the external confinement potential (top gate potential) and the Fermi energy (back gate potential) are described in good qualitative agreement with the experimental data. For a fixed number of excess electrons we find that the excess charge added to the system is, - depending on the voltages defining the work point of the device: $(i)$ delocalized outside the quantum dot, - in the transport gap due to the top gate potential $(ii)$ localized inside the quantum dot, - in the transport gap due to the back gate potential or $(iii)$ extended over both the quantum dot area and the ribbon connections, - outside the transport gaps. The applicability of the frozen valence band approximation to describe charging the quantum dot by excess electrons is also discussed.

preprint2014arXiv

Imaging transition to fractional quantum Hall regime by Coulomb blockade microscopy

We consider electron systems in quantum dots and imaging of the confined charge density by the Coulomb blockade microscopy (CBM) with the scanning probe technique. We apply an exact diagonalization method to study the reaction of the electron system to the potential induced by the model potential of the probe and calculate the energy maps as functions of the position of the probe. The charge densities derived from the energy maps are confronted to the exact charge densities. We focus on the transition of the electron system to the fractional quantum Hall conditions in external magnetic field. For magnetic fields corresponding to the integer fillings of the lowest Landau level the electron system exhibits a liquid-like reaction to the potential of the probe and the confined charge density can be quite accurately mapped by the CBM. For fractional fillings of the lowest Landau level the single-electron charge density islands nucleate in presence of the tip. In circular quantum dots the single-electron islands evade imaging by CBM. We demonstrate that mapping the molecular charge densities is possible for confinement potentials of symmetry that is lower and consistent with the geometry of the lowest-energy charge distribution of the single-electron islands.

preprint2013arXiv

Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy

We study quantum dots defined by external potentials within finite flakes of bilayer graphene using the tight-binding approach. We find that in the limit of large flakes containing zigzag edges the dot-localized energy levels appear within the energy continuum formed by extended states. As a consequence no ionization threshold for the carriers contained within the dot exists. For smaller flakes with zigzag boundaries the dot-localized energy levels appear interlaced with the energy levels outside the flake, so in a charging experiment the electrons will be added alternately to the dot area and to its neighborhood. We demonstrate that for flakes with armchair boundaries only, an energy window accessible uniquely to the dot-localized states is opened. Then a number of electrons can be added to the dot before the external states start to be occupied. We also discuss coupling of the dot-localized states to the edge states in the context of the valley degeneracy lifting. Moreover, we extract smooth envelope wave functions from the tight-binding solution and discuss their spatial symmetries. The coupling of the dot localized energy levels with reconstructed zigzag edges and atomic vacancies present within the layers is also considered.

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