Researcher profile

D. O. Tolmachev

D. O. Tolmachev contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2021arXiv

Deep optical cooling of coupled nuclear spin-spin and quadrupole reservoirs in a GaAs/(Al,Ga)As quantum well

The selective cooling of $^{75}$As spins by optical pumping followed by adiabatic demagnetization in the rotating frame is realized in a nominally undoped GaAs/(Al,Ga)As quantum well. The rotation of 6 kG strong Overhauser field at the $^{75}$As Larmor frequency of 5.5 MHz is evidenced by the dynamic Hanle effect. Despite the presence of the quadrupole induced nuclear spin splitting, it is shown that the rotating $^{75}$As magnetization is uniquely determined by the spin temperature of coupled spin-spin and quadrupole reservoirs. The dependence of heat capacity of these reservoirs on the external magnetic field direction with respect to crystal and structure axes is investigated. The lowest nuclear spin temperature achieved is 0.54 $μ$K, which is the record low value for semiconductors and semiconductor nanostructures.

preprint2020arXiv

Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets

Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.

preprint2016arXiv

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.

preprint2015arXiv

Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing at temperatures up to 250$^\circ$C. Thus the concept of optically addressable silicon vacancy related centers with half integer ground spin state is extended to the wide class of SiC rhombic polytypes. The structure of these centers, which is a fundamental problem for quantum applications, has been established using high frequency ENDOR. It has been shown that a family of siliconvacancy related centers is a negatively charged silicon vacancy in the paramagnetic state with the spin $S= 3/2$, V$_\textrm{Si}^-$, perturbed by neutral carbon vacancy in non-paramagnetic state, V$_\textrm{C}^0$, having no covalent bond with the silicon vacancy and located adjacently to the silicon vacancy on the c crystal axis.