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Researcher profile

D. N. Zheng

D. N. Zheng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2015arXiv

Coherent population transfer between weakly-coupled states in a ladder-type superconducting qutrit

Stimulated Raman adiabatic passage (STIRAP) offers significant advantages for coherent population transfer between un- or weakly-coupled states and has the potential of realizing efficient quantum gate, qubit entanglement, and quantum information transfer. Here we report on the realization of STIRAP in a superconducting phase qutrit - a ladder-type system in which the ground state population is coherently transferred to the second-excited state via the dark state subspace. The result agrees well with the numerical simulation of the master equation, which further demonstrates that with the state-of-the-art superconducting qutrits the transfer efficiency readily exceeds $99\%$ while keeping the population in the first-excited state below $1\%$. We show that population transfer via STIRAP is significantly more robust against variations of the experimental parameters compared to that via the conventional resonant $π$ pulse method. Our work opens up a new venue for exploring STIRAP for quantum information processing using the superconducting artificial atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum and classical resonant escapes of a strongly-driven Josephson junction

The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power $W$ and at certain frequencies $ν$ and $ν$/2, the single primary peak in the switching current distribution, \textrm{which is the result of macroscopic quantum tunneling of the phase across the junction}, first shifts toward lower bias current $I$ and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As $W$ further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower $I$. At certain $W$, a second resonant peak appears, which can locate at very low $I$ depending on the value of $ν$. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at $T\ll T_{cr}$, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Phase Diffusion in a Small Underdamped Josephson Junction

Quantum phase diffusion in a small underdamped Nb/AlO$_x$/Nb junction ($\sim$ 0.4 $μ$m$^2$) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.

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