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D. Mayou

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Published work

4 published item(s)

preprint2020arXiv

Quantum transport in flat bands and super-metallicity

Quantum physics in flat-band (FB) systems embodies a variety of exotic phenomenon and even counter intuitive features. The quantum transport in several graphene based compounds that exhibit a flat band and a tunable gap is investigated. Despite the localized nature of the FB states and a zero group velocity, a super-metallic (SM) phase at the FB energy is revealed. The SM phase is robust against the inelastic scattering strength and controlled only by the inter-band transitions between the FB and the dispersive bands. The SM phase appears insensitive and quasi independent of the gap amplitude and nature of the lattice (disordered or nano-patterned). The universal nature of the unconventional FB transport is illustrated with the case of electrons in the Lieb lattice.

preprint2012arXiv

Numerical studies of confined states in rotated bilayers of graphene

Rotated graphene multilayers form a new class of graphene related systems with electronic properties that drastically depend on the rotation angles. It has been shown that bilayers behave like two isolated graphene planes for large rotation angles. For smaller angles, states in the Dirac cones belonging to the two layers interact resulting in the appearance of two van Hove singularities. States become localised as the rotation angle decreases and the two van Hove singularities merge into one peak at the Dirac energy. Here we go further and consider bilayers with very small rotation angles. In this case, well defined regions of AA stacking exist in the bilayer supercell and we show that states are confined in these regions for energies in the [-γ_t, +γ_t] range with γ_t the interplane mean interaction. As a consequence, the local densities of states show discrete peaks for energies different from the Dirac energy.

preprint2011arXiv

Transient localization in crystalline organic semiconductors

A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to extract fundamental quantities such as the elastic and inelastic scattering rates, as well as the localization length in disordered systems. When applied to crystalline organic semiconductors, an incipient electron localization caused by large dynamical lattice disorder is unveiled, implying a breakdown of semiclassical transport.

preprint2002arXiv

Indirect Mn-Mn pair interaction induces pseudogap in density of states of Al(Si)-Mn approximants

The effect on the electronic structure of an indirect Mn-Mn interaction mediated by the valence states and the sp-d hybridisation is presented. In Al(rich)-Mn phases related to quasicrystals (Al12Mn, o-Al6Mn, alpha-Al9Mn2Si), this indirect interaction creates a Hume-Rothery pseudogap in the density of states together with a minimisation of the band energy. It is shown that Mn-Mn interaction up to distances around 1.0-2.0 nm plays an essential role in stabilizing related quasicrystal structures.