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D. M. Polishchuk

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2 publications

preprint2016arXiv

Anisotropic magnetization relaxation in ferromagnetic multilayers with variable interlayer exchange coupling

The FMR linewidth and its anisotropy in F1_1/f/F2_2/AF multilayers, where spacer f has a low Curie point compared to the strongly ferromagnetic F1_1 and F2_2, is investigated. The role of the interlayer exchange coupling in magnetization relaxation is determined experimentally by varying the thickness of the spacer. It is shown that stronger interlayer coupling via thinner spacers enhances the microwave energy exchange between the outer ferromagnetic layers, with the magnetization of F2_2 exchange-dragged by the resonance precession in F1_1. A weaker mirror effect is also observed: the magnetization of F1_1 can be exchange-dragged by the precession in F2_2, which leads to anti-damping and narrower FMR linewidths. A theory is developed to model the measured data, which allows separating various contributions to the magnetic relaxation in the system. Key physical parameters, such as the interlayer coupling constant, in-plane anisotropy of the FMR linewidth, dispersion of the magnetic anisotropy fields are quantified. These results should be useful for designing high-speed magnetic nanodevices based on thermally-assisted switching.

preprint2016arXiv

Effect of nanostructure layout on spin pumping phenomena in antiferromagnet/ nonmagnetic metal/ ferromagnet multilayered stacks

In this work we focus on magnetic relaxation in Mn80_{80}Ir20_{20}(12 nm)/ Cu(6 nm)/ Py(dFd_\mathrm{F}) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pumping effect -- is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers.

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