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D. L. Zhang

D. L. Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci astro-ph.HE cond-mat.mes-hall

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preprint2021arXiv

GECAM detection of a bright type-I X-ray burst from 4U 0614+09: confirmation its spin frequency at 413 Hz

One month after launching Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor (GECAM), a bright thermonuclear X-ray burst from 4U~0614+09, was observed on January 24, 2021. We report the time-resolved spectroscopy of the burst and a burst oscillation detection at 413 Hz with a fractional amplitude 3.4\% (rms). This coincides with the burst oscillation previously discovered with \textit{Swift}/BAT \citep{Strohmayer2008}, and therefore confirms the spin frequency of this source. This burst is the brightest one in the normal bursts (except the superburst) ever detected from 4U~0614+09, which leads to an upper limit of distance estimation as 3.1 kpc. The folded light curve during the burst oscillation shows a multi-peak structure, which is the first case observed during a single burst oscillation in nonpulsating sources. The multi-peak profile could be due to additional harmonics of the burst oscillation, which is corresponding to several brighter/fainter spots at the stellar surface.

preprint2020arXiv

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

preprint2010arXiv

Intrinsic Room Temperature Ferromagnetism in Boron-doped ZnO

We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed-laser deposition show ferromagnetic behavior at room temperature. The saturation magnetization increases monotonously from 0 to 1.5 emu/cm3 with the increasing of B component x from 0 to 6.8%. The first-principles calculations based on density functional theory demonstrate that the ferromagnetism in B-doped ZnO originates from the induced magnetic moments of oxygen atoms in the nearest neighbor sites to the B-Zn vacancy pair. The calculated total magnetic moment increasing tendency with B component is well consistent with experiments.

preprint2009arXiv

Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers

Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm takes on strongly antiferromagnetic coupling, which maintains up to 150 oC annealing for 1 hour. The structure has a very low saturation magnetization Ms of 425 emu/cc, a low switching field Hsw of 4.3 Oe and a high saturation field Hs of 5257 Oe at room temperature, which are favorable for application in ultrahigh density magnetic read heads or other magnetic memory devices. XRD study testifies that the as-deposited Co2FeAl film is in B2 phase. Therefore Heusler alloys can be used to fabricate SyAF and it is possible to make "all-Heusler" spin-valves or magnetic tunneling junctions with better magnetic switching properties and high magnetoresistance.