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Researcher profile

D. J. Paul

D. J. Paul contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2016arXiv

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime

We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the investigated sample n-Si/Si_{0.7}Ge_{0.3}, overshoots exist for almost all ν. Existence of overshoot in R_{xy} observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves R_{xy}(ν) for ν= 3 and ν= 5 with and without overshoot showed that this effect exist in the whole interval between plateaus, not only in the region where R_{xy} exceeds the normal plateau value.

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