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D. J. Lockwood

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Influence of interface potential on the effective mass in Ge nanostructures

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass.

preprint2014arXiv

Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures

Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small $D$.

preprint2011arXiv

Rare-earth monosulfides as durable and efficient cold cathodes

In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the successful deposition of Lanthanum Monosulfide via pulsed laser deposition on Si and MgO substrates and alumina templates. These thin films have been characterized by X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, ellipsometry, Raman spectroscopy, ultraviolet photoelectron spectroscopy and Kelvin probe measurements. For both LaS/Si and LaS/MgO thin films, the effective work function of the submicron thick thin films was determined to be about 1 eV from field emission measurements using the Scanning Anode Field Emission Microscopy technique. The physical reasons for these highly desirable low work function properties were explained using a patchwork field emission model of the emitting surface. In this model, nanocrystals of low work function materials having a <100> orientation perpendicular to the surface and outcropping it are surrounded by a matrix of amorphous materials with higher work function. To date, LaS thin films have been used successfully as cold cathode emitters with measured emitted current densities as high as 50 A/cm2. Finally, we describe the successful growth of LaS thin films on InP substrates and, more recently, the production of LaS nanoballs and nanoclusters using Pulsed Laser Ablation.

preprint2008arXiv

Exact-Diagonalization Studies of Inelastic Light Scattering in Self-Assembled Quantum Dots

We report exact diagonalization studies of inelastic light scattering in few-electron quantum dots under the strong confinement regime characteristic of self-assembled dots. We apply the orthodox (second-order) theory for scattering due to electronic excitations, leaving for the future the consideration of higher-order effects in the formalism (phonons, for example), which seem relevant in the theoretical description of available experiments. Our numerical results stress the dominance of monopole peaks in Raman spectra and the breakdown of selection rules in open-shell dots. The dependence of these spectra on the number of electrons in the dot and the incident photon energy is explicitly shown. Qualitative comparisons are made with recent experimental results.