Isotopic enrichment of silicon by high fluence Si ion implantation
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of nat Si by sputtering using high fluence Si implantation. Phosphorus (P) donors implanted into one such Si layer with ~3000 ppm Si, produced by implanting 30 keV Si ions at a fluence of 4x10^18 cm^-2, were measured with pulsed electron spin resonance, confirming successful donor activation upon annealing. The mono-exponential decay of the Hahn echo signal indicates a depletion of Si. A coherence time of T2 = 285 +/- 14 us is extracted, which is longer than that obtained in nat Si for similar doping concentrations and can be increased by reducing the P concentration in future. The isotopic enrichment was improved by employing one-for-one ion sputtering using 45 keV Si implantation. A fluence of 2.63x10^18 cm^-2 Si ions were implanted at this energy into nat Si, resulting in an isotopically enriched surface layer ~100 nm thick; suitable for providing a sufficient volume of Si for donor qubits implanted into the near-surface region. We observe a depletion of Si to 250 ppm as measured by secondary ion mass spectrometry. The impurity content and the crystallization kinetics via solid phase epitaxy are discussed. The Si layer is confirmed to be a single crystal using transmission electron microscopy. This method of Si isotopic enrichment shows promise for incorporating into the fabrication process flow of Si spin qubit devices.