Researcher profile

D. Holec

D. Holec contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

Graphite under uniaxial compression along c-axis: a new parameter relates out-of-plane strain to in-plane phonon frequency

Stacking graphene sheets forms graphite. Two in-plane vibrational modes of graphite, E1u and E2g(2), are derived from graphene E2g mode, the shifts of which under compression are all considered as results of in-plane bond shortening. Values of Gruneisen parameter have been reported to quantify such relation. However, the reason why the shift rates of these three modes with pressure differ is unclear. In this work, we introduce a new parameter to quantify the contribution of out-of-plane strain to the in-plane vibrational frequencies, suggesting that the compression of π-electrons plays a non-negligible part in both graphite and graphene under high pressure.

preprint2014arXiv

Complementary ab initio and X-ray nano-diffraction study of Ta2O5

Numerous different crystal structures of Ta2O5 are reported in literature. Although experimentally and computationally obtained lattice parameters and mechanical properties are in excellent agreement there is a pronounced deviation when it comes to electronic structures of Ta2O5. Based on ab initio studies and nano-beam X-ray diffraction of sputtered Ta2O5 thin films, we introduce an orthorhombic basic structure with a = 0.6425, b = 0.3769, and c = 0.7706 nm, which is stabilized by flipping of an oxygen atom in neighboring c-planes. The calculated energy of formation is with -3.209 eV/atom almost as low as -3.259 eV/atom for the well-known Stephenson superstructure. We propose the new structure based on the fact that it allows for a good description of orthorhombic Ta2O5 even with a small and simple unit cell, which is especially advantageous for computational studies.

preprint2012arXiv

Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5

Reactive magnetron sputtering enables the deposition of various thin films to be used for protective as well as optical and electronic applications. However, progressing target erosion during sputtering results in increased magnetic field strengths at the target surface. Consequently, the glow discharge, the target poisoning, and hence the morphology, crystal structure and stoichiometry of the prepared thin films are influenced. Therefore, these effects were investigated by varying the cathode current Im between 0.50 and 1.00 A, the magnetic field strength B between 45 and 90 mT, and the O2/(Ar+O2) flow rate ratio between 0 and 100%. With increasing oxygen flow ratio a sub-stoichiometric TaOx oxide forms at the metallic Ta target surface which further transfers to a non-conductive tantalum pentoxide Ta2O5, impeding a stable DC glow discharge. These two transition zones (from Ta to TaOx and from TaOx to Ta2O5) shift to higher oxygen flow rates for increasing target currents. Contrary, increasing the magnetic field strength (e.g., due to sputter erosion) mainly shifts the TaOx to Ta2O5 transition to lower oxygen flow rates while marginally influencing the Ta to TaOx transition. To allow for a stable DC glow discharge (and to suppress the formation of non-conductive Ta2O5 at the target) even at a flow rate ratio of 100% either a high target current (Im >= 1 A) or a low magnetic field strength (B <= 60 mT) is necessary. These conditions are required to prepare stoichiometric and fully crystalline Ta2O5 films. Our investigations clearly demonstrate the importance of the magnetic field strength, which changes during sputter erosion, on the target poisoning and the resulting film quality.