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D. Guan

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.quant-gas

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preprint2013arXiv

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.

preprint2012arXiv

Unconventional spin texture of a topologically nontrivial semimetal Sb(110)

The surfaces of antimony are characterized by the presence of spin-split states within the projected bulk band gap and the Fermi contour is thus expected to exhibit a spin texture. Using spin-resolved density functional theory calculations, we determine the spin polarization of the surface bands of Sb(110). The existence of the unconventional spin texture is corroborated by the investigations of the electron scattering on this surface. The charge interference patterns formed around single scattering impurities, imaged by scanning tunneling microscopy, reveal the absence of direct backscattering signal. We identify the allowed scattering vectors and analyze their bias evolution in relation to the surface-state dispersion.

preprint2011arXiv

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.