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Source author record

D. B. Gopman

D. B. Gopman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-ph

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Published work

4 published item(s)

preprint2016arXiv

The Polar Nano Regions $\rightleftharpoons$ Relaxor Transition in $Pb_{1-X}(Sc_{1/2}Nb_{1/2})O_{3-X}$; $X$ = bulk concentration of nearest neighbor [Pb-O] divacancies

In previous work, molecular dynamics simulations based on a first-principles-derived effective Hamiltonian for $Pb_{1-X}(Sc_{1/2}Nb_{1/2})O_{3-X}$~ (PSN), with nearest-neighbor Pb-O divacancy pairs, was used to calculate $X_{\rm [Pb-O]}$~vs.~T, phase diagrams for PSN with: ideal rock-salt type chemical order; nanoscale chemical short-range order; and random chemical disorder. Here, we show that the phase diagrams should include additional regions in which a glassy relaxor-phase (or state) is predicted. With respect to phase diagram topology, these results strongly support the analogy between relaxors and magnetic spin-glass-systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars

We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally-induced switching model breaks down for currents exceeding the critical threshold.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars

We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model thats fit the experimental data in which we take a $T^{3/2}$ dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer

We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) step changes in resistance that we associate with domain nucleation, have a bimodal switching field and resistance step distribution, attributable to two competing nucleation pathways.

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