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Researcher profile

Curran Kalha

Curran Kalha contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nnphysics.chem-ph

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Published work

5 published item(s)

preprint2023arXiv

Capturing the dynamics of Ti diffusion across Ti$_x$W$_{1-x}$/Cu heterostructures using X-ray photoelectron spectroscopy

Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO\textsubscript{2}/Ti$_x$W$_{1-x}$(300 nm)/Cu(25 nm) thin film material stack, with the Ti$_x$W$_{1-x}$ film acting as a diffusion barrier between Si and Cu. The monitoring of diffusion is achieved through the continuous collection of spectra whilst in-situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the Ti$_x$W$_{1-x}$ film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations ($x$ = 0.054), W is also mobile and diffuses alongside Ti. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.

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preprint2023arXiv

Satellites in the Ti~1$s$ core level spectra of SrTiO$_3$ and TiO$_2$

Satellites in core level spectra of photoelectron spectroscopy (PES) can provide crucial information on the electronic structure and chemical bonding in materials, particular in transition metal oxides. This paper explores satellites of the Ti 1$s$ and 2$p$ core level spectra of SrTiO$_3$ and TiO$_2$. Conventionally, soft x-ray PES (SXPS) probes the Ti 2$p$ core level; however, it is not ideal to fully capture satellite features due to its inherent spin-orbit-splitting (SOS). Here, hard x-ray PES(HAXPES) provides access to the Ti 1$s$ spectrum instead, which allows us to study intrinsic charge responses upon core-hole creation without the complication from SOS and with favorable intrinsic linewidths. The experimental spectra are theoretically analyzed by two impurity models, including an Anderson impurity model (AIM) built on local density approximation (LDA) and dynamical mean-field theory (DMFT), and a conventional TiO$_6$ cluster model. The theoretical results emphasize the importance of explicit inclusion of higher-order Ti-O charge-transfer processes beyond the nearest-neighboring Ti-O bond to simulate the core level spectra of SrTiO$_3$ and TiO$_2$. The AIM approach with continuous bath orbitals provided by LDA+DMFT represents the experimental spectra well. Crucially, with the aid of the LDA+DMFT method, this paper provides a robust prescription of how to use the computationally cheap cluster model in fitting analyses of core level spectra.

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preprint2022arXiv

Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach

Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.

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preprint2022arXiv

Tackling Disorder in $γ$-Ga$_2$O$_3$

Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.

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preprint2021arXiv

Lifetime effects and satellites in the photoelectron spectrum of tungsten metal

Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.

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