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Cristian Ferreyra

Cristian Ferreyra contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2018arXiv

Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the motion of oxygen vacancies (OV) at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to conducting, i.e. to accomplish the resistive switching effect. The control of OV dynamics has a direct effect on the resistance changes, and therefore on different figures of memristive devices, such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow for measurements of OV dynamics, but also of theoretical studies that shed light on the involved mechanisms. Along this goal, we analize the OV dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of OV can be manipulated by using different electrical stimuli protocols to optimize device figures such as the ON/OFF ratio or the energy dissipation linked to the writing process. Analytical expressions for attained resistance values, including the high and low resistance states are derived in terms of total transferred OV in a nanoscale region of the interface. Our predictions are validated with experiments performed in Ti/La$_{1/3}$Ca$_{2/3}$MnO$_{3}$ redox memristive devices.

preprint2016arXiv

Tuning the electronic properties at the surface of BaBiO3 thin films

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.