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Cory D. Hauck

Cory D. Hauck contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Neural network-based, structure-preserving entropy closures for the Boltzmann moment system

This work presents neural network based minimal entropy closures for the moment system of the Boltzmann equation, that preserve the inherent structure of the system of partial differential equations, such as entropy dissipation and hyperbolicity. The described method embeds convexity of the moment to entropy map in the neural network approximation to preserve the structure of the minimal entropy closure. Two techniques are used to implement the methods. The first approach approximates the map between moments and the minimal entropy of the moment system and is convex by design. The second approach approximates the map between moments and Lagrange multipliers of the dual of the minimal entropy optimization problem, which present the gradients of the entropy with respect to the moments, and is enforced to be monotonic by introduction of a penalty function. We derive an error bound for the generalization gap of convex neural networks which are trained in Sobolev norm and use the results to construct data sampling methods for neural network training. Numerical experiments are conducted, which show that neural network-based entropy closures provide a significant speedup for kinetic solvers while maintaining a sufficient level of accuracy. The code for the described implementations can be found in the Github repositories.

preprint2021arXiv

Conservative DG Method for the Micro-Macro Decomposition of the Vlasov-Poisson-Lenard-Bernstein Model

The micro-macro (mM) decomposition approach is considered for the numerical solution of the Vlasov--Poisson--Lenard--Bernstein (VPLB) system, which is relevant for plasma physics applications. In the mM approach, the kinetic distribution function is decomposed as $f=\mathcal{E}[\boldsymbolρ_{f}]+g$, where $\mathcal{E}$ is a local equilibrium distribution, depending on the macroscopic moments $\boldsymbolρ_{f}=\int_{\mathbb{R}}\boldsymbol{e} fdv=\langle\boldsymbol{e} f\rangle_{\mathbb{R}}$, where $\boldsymbol{e}=(1,v,\frac{1}{2}v^{2})^{\rm{T}}$, and $g$, the microscopic distribution, is defined such that $\langle\boldsymbol{e} g\rangle_{\mathbb{R}}=0$. We aim to design numerical methods for the mM decomposition of the VPLB system, which consists of coupled equations for $\boldsymbolρ_{f}$ and $g$. To this end, we use the discontinuous Galerkin (DG) method for phase-space discretization, and implicit-explicit (IMEX) time integration, where the phase-space advection terms are integrated explicitly and the collision operator is integrated implicitly. We give special consideration to ensure that the resulting mM method maintains the $\langle\boldsymbol{e} g\rangle_{\mathbb{R}}=0$ constraint, which may be necessary for obtaining (i) satisfactory results in the collision dominated regime with coarse velocity resolution, and (ii) unambiguous conservation properties. The constraint-preserving property is achieved through a consistent discretization of the equations governing the micro and macro components. We present numerical results that demonstrate the performance of the mM method. The mM method is also compared against a corresponding DG-IMEX method solving directly for $f$.

preprint2020arXiv

Analysis of a new implicit solver for a semiconductor model

We present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann-Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov-Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann-Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, with a recently developed nested iterative solver.

preprint2020arXiv

Hybrid Solver for the Radiative Transport Equation Using Finite Volume and Discontinuous Galerkin

We propose a hybrid spatial discretization for the radiative transport equation that combines a second-order discontinuous Galerkin (DG) method and a second-order finite volume (FV) method. The strategy relies on a simple operator splitting that has been used previously to combine different angular discretizations. Unlike standard FV methods with upwind fluxes, the hybrid approach is able to accurately simulate problems in scattering dominated regimes. However, it requires less memory and yields a faster computational time than a uniform DG discretization. In addition, the underlying splitting allows naturally for hybridization in both space and angle. Numerical results are given to demonstrate the efficiency of the hybrid approach in the context of discrete ordinate angular discretizations and Cartesian spatial grids.

preprint2019arXiv

A fast implicit solver for semiconductor models in one space dimension

Several different approaches are proposed for solving fully implicit discretizations of a simplified Boltzmann-Poisson system with a linear relaxation-type collision kernel. This system models the evolution of free electrons in semiconductor devices under a low-density assumption. At each implicit time step, the discretized system is formulated as a fixed-point problem, which can then be solved with a variety of methods. A key algorithmic component in all the approaches considered here is a recently developed sweeping algorithm for Vlasov-Poisson systems. A synthetic acceleration scheme has been implemented to accelerate the convergence of iterative solvers by using the solution to a drift-diffusion equation as a preconditioner. The performance of four iterative solvers and their accelerated variants has been compared on problems modeling semiconductor devices with various electron mean-free-path.