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Coriolan Tiusan

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cond-mat.mes-hall cond-mat.supr-con cond-mat.mtrl-sci

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preprint2020arXiv

Low-energy spin precession in the molecular field of a magnetic thin film

Electronic spin precession and filtering are measured in the molecular field of magnetic thin films. The conducted lab-on-chip experiments allow injection of electrons with energies between 0.8 and 1.1 eV, an energy range never explored up to now in spin precession experiments. While filtering angles agree with previous reported values measured at much higher electron energies, spin precession angles of 2.5° in CoFe and 0.7° in Co per nanometer film thickness could be measured which are 30 times smaller than those previously measured at 7 eV. Band structure effects and layer roughness are responsible for these small precession angle values.

preprint2020arXiv

Superconductivity-induced change in magnetic anisotropy in epitaxial ferromagnet-superconductor hybrids with spin-orbit interaction

The interaction between superconductivity and ferromagnetism in thin film superconductor/ferromagnet heterostructures is usually reflected by a change in superconductivity of the S layer set by the magnetic state of the F layers. Here we report the converse effect: transformation of the magnetocrystalline anisotropy of a single Fe(001) layer, and thus its preferred magnetization orientation, driven by the superconductivity of an underlying V layer through a spin-orbit coupled MgO interface. We attribute this to an additional contribution to the free energy of the ferromagnet arising from the controlled generation of triplet Cooper pairs, which depends on the relative angle between the exchange field of the ferromagnet and the spin-orbit field. This is fundamentally different from the commonly observed magnetic domain modification by Meissner screening or domain wall-vortex interaction and offers the ability to fundamentally tune magnetic anisotropies using superconductivity - a key step in designing future cryogenic magnetic memories.

preprint2019arXiv

Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics

Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing an electrical control of spin or magnetization and, vice versa, a magnetic control of electrical current. However, recent advances have revealed much broader implications of SOC that is also central to the design of topological states, including topological insulators, skyrmions, and Majorana fermions, or to overcome the exclusion of two-dimensional ferro-magnetism expected from the Mermin-Wagner theorem. SOC and the resulting emergent interfacial spin-orbit fields are simply realized in junctions through structural inversion asymmetry, while the anisotropy in magnetoresistance (MR) allows for their experimental detection. Surprisingly, we demonstrate that an all-epitaxial ferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes a remarkable transformation below the superconducting transition temperature of the metal. The superconducting junction has a three orders of magnitude higher MR anisotropy and supports the formation of spin-triplet superconductivity, crucial for superconducting spintronics, and topologically-protected quantum computing. Our findings call for revisiting the role of SOC in other systems which, even when it seems negligible in the normal state, could have a profound influence on the superconducting response.

preprint2013arXiv

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions.