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Clément Bouvier

Clément Bouvier appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2013arXiv

Epitaxial graphene morphologies probed by weak (anti)-localization

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].

preprint2013arXiv

Topological surface states of strained Mercury-Telluride probed by ARPES

The topological surface states of strained HgTe have been measured using high-resolution ARPES measurements. The dispersion of surface states form a Dirac cone, which origin is close to the top of the \ghh band: the top half of the Dirac cone is inside the stress-gap while the bottom half lies within the heavy hole bands and keeps a linear dispersion all the way to the X-point. The circular dichroism of the photo-emitted electron intensity has also been measured for all the bands.

preprint2011arXiv

Strained HgTe: a textbook 3D topological insulator

Topological insulators can be seen as band-insulators with a conducting surface. The surface carriers are Dirac particles with an energy which increases linearly with momentum. This confers extraordinary transport properties characteristic of Dirac matter, a class of materials which electronic properties are "graphene-like". We show how HgTe, a material known to exhibit 2D spin-Hall effect in thin quantum wells,\cite{Konig2007} can be turned into a textbook example of Dirac matter by opening a strain-gap by exploiting the lattice mismatch on CdTe-based substrates. The evidence for Dirac matter found in transport shows up as a divergent Hall angle at low field when the chemical potential coincides with the Dirac point and from the sign of the quantum correction to the conductivity. The material can be engineered at will and is clean (good mobility) and there is little bulk contributions to the conductivity inside the band-gap.