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Claire Baraduc

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Published work

4 published item(s)

preprint2022arXiv

Gate-controlled skyrmion and domain wall chirality

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.

preprint2020arXiv

Electric field control of interfacial Dzyaloshinskii-Moriya interaction in Pt/Co/AlO$_x$ thin films

We studied electric field modification of magnetic properties in a Pt/Co/AlO$_x$ trilayer via magneto-optical Kerr microscopy. We observed the spontaneous formation of labyrinthine magnetic domain structure due to thermally activated domain nucleation and propagation under zero applied magnetic field. A variation of the period of the labyrinthine structure under electric field is observed as well as saturation magnetization and magnetic anisotropy variations. Using an analytical formula of the stripe equilibrium width we estimate the variation of the interfacial Dzyaloshinskii-Moriya interaction under electric field as function of the exchange stiffness constant.

preprint2020arXiv

Skyrmion Brownian circuit implemented in a continuous ferromagnetic thin film

The fabrication of a skyrmion circuit which stabilizes skyrmions is important to realize micro- to nano-sized skyrmion devices. One example of promising skyrmion-based device is Brownian computers, which have been theoretically proposed, but not realized. It would require a skyrmion circuit in which the skyrmion is stabilized and easily movable. However, the usual skyrmion circuits fabricated by etching of the ferromagnetic film decrease the demagnetization field stabilizing the skyrmions, and thus prevent their formation. In this study, a skyrmion Brownian circuit implemented in a continuous ferromagnetic film with patterned SiO$_2$ capping to stabilize the skyrmion formation. The patterned SiO$_2$ capping controls the saturation field of the ferromagnetic layer and forms a wire-shaped skyrmion potential well, which stabilizes skyrmion formation in the circuit. Moreover, we implement a hub (Y-junction) circuit without pinning sites at the junction by patterned SiO$_2$ capping. This technique enables the efficient control of skyrmion-based memory and logic devices, as well as Brownian computers.

preprint2012arXiv

Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions

We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double barrier magnetic tunnel junctions.