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Chunsheng Liu

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2 published item(s)

preprint2011arXiv

Constructing silicon nanotubes by assembling hydrogenated silicon clusters

The search or design of silicon nanostructures similar to their carbon analogues has attracted great interest recently. In this work, density functional calculations are performed to systematically study a series of finite and infinite hydrogenated cluster-assembled silicon nanotubes (SiNTs). It is found that stable one-dimensional SiNTs with formula $Si_{m(3k+1)}H_{2m(k+1)}$ can be constructed by proper assembly of hydrogenated fullerene-like silicon clusters $Si_{4m}H_{4m}$. The stability is first demonstrated by the large cohesive energies and HOMO-LUMO gaps. Among all such silicon nanotubes, the ones built from $Si_{20}H_{20}$($m=5$) and $Si_{24}H_{24}$($m=6$) are the most stable due to the silicon bond angles that are most close to the bulk $sp^{3}$ type in these structures. Thermostability analysis further verifies that such tubes may well exist at room temperature. Finally, both finite nanotubes and infinite nanotubes show a large energy gap. A direct-indirect-direct band gap transition has been revealed with the increase of the tube radius. The existence of direct band gap may make them potential building blocks for electronic and optoelectronic devices.

preprint2011arXiv

Rational Design of Half-Metallic Heterostructures

We present a rational approach to the design of half-metallic heterostructures which allows the design of an infinite number of half-metallic heterostructures. The wide range of materials that can be made half-metallic using our approach makes it possible to engineer materials with tunable characteristic properties, for example low intrinsic magnetic damping, small magnetic moment or perpendicular anisotropy. We demonstrate the proposed design scheme for a series of transition metal heterostructures based on the B2 crystal structure.