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Chuan Zhao

Chuan Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

Mining Function Homology of Bot Loaders from Honeypot Logs

Self-contained loaders are widely adopted in botnets for injecting loading commands and spawning new bots. While researchers can dissect bot clients to get various information of botnets, the cloud-based and self-contained design of loaders effectively hinders researchers from understanding the loaders' evolution and variation using classic methods. The decoupled nature of bot loaders also dramatically reduces the feasibility of investigating relationships among clients and infrastructures. In this paper, we propose a text-based method to investigate and analyze details of bot loaders using honeypots. We leverage high interaction honeypots to collect request logs and define eight families of bot loaders based on the result of agglomerative clustering. At the function level, we push our study further to explore their homological relationship based on similarity analysis of request logs using sequence aligning techniques. This further exploration discloses that the released code of Mirai keeps spawning new generations of botnets both on the client and the server side. This paper uncovers the homology of active botnet infrastructures, providing a new prospect on finding covert relationships among cybercrimes. Bot loaders are precisely investigated at the function level to yield a new insight for researchers to identify the botnet's infrastructures and track their evolution over time.

preprint2016arXiv

Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors

We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.