Researcher profile

Christopher Chen

Christopher Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Energy Efficiency Tradeoffs for Sub-THz Multi-User MIMO Base Station Receivers

Sub-terahertz (sub-THz) antenna array architectures significantly impact power usage and communications capacity in multi-user multiple-input multiple-output (MU-MIMO) systems. In this work, we compare the energy efficiency and spectral efficiency of three MU-MIMO capable array architectures for base station receivers. We provide a sub-THz circuits power analysis, based on our review of state-of-the-art D-band and G-band components, and compare communications capabilities through wideband simulations. Our analysis reveals that digital arrays can provide the highest spectral efficiency and energy efficiency, due to the high power consumption of sub-THz active phase shifters or when SNR and system spectral efficiency requirements are high.

preprint2020arXiv

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies.