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Christoph Sürgers

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Published work

4 published item(s)

preprint2024arXiv

Nano-assembled open quantum dot nanotube devices

A pristine suspended carbon nanotube is a near ideal environment to host long-lived quantum states. For this reason, they have been used as the core element of qubits and to explore numerous condensed matter physics phenomena. One of the most advanced technique to realize complex carbon nanotube based quantum circuits relies on a mechanical integration of the nanotube into the circuit. Despite the high-quality and complexity of the fabricated circuits, the range of possible experiments was limited to the closed quantum dot regime. Here, by engineering a transparent metal-nanotube interface, we developed a technique that overcomes this limitation. We reliably reach the open quantum dot regime as demonstrated by measurements of Fabry-Perot interferences and Kondo physics in multiple devices. A circuit-nanotube alignment precision of +/-200nm is demonstrated. Our technique allows to envision experiments requiring the combination of complex circuits and strongly coupled carbon nanotubes such as the realization of carbon nanotube superconducting qubits or flux-mediated optomechanics experiments.

preprint2017arXiv

Two-band superconductivity of bulk and surface states in Ag thin films on Nb

We use epitaxial strain to shift the energy of the two-dimensional Ag(111) surface states of Ag islands on Nb(110) substrates, allowing to spatially tune the bottom of the surface-state band $E_{\rm SS}$ through the Fermi level $E_{\rm F}$. Bulk and surface-state contributions to the Ag(111) local density of states (LDOS) can be separated with scanning tunneling spectroscopy. For thick islands ($\approx$\, 20 nm), the Ag surface states are decoupled from the Ag bulk states via orthogonality, and the superconductive gap induced by proximity to Nb is due to bulk states only. However, for thin islands (3-4 nm), surface-state electrons develop superconducting correlations as identified by a complete energy gap in the LDOS when $E_{\rm F}$ is smaller than but close to $E_{\rm F}$. The induced superconductivity in this case is of two-band nature and appears to occur when the surface-state wave function reaches down to the Ag/Nb interface.

preprint2014arXiv

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

preprint2014arXiv

Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for the germanide films. This difference is attributed to the different hybridization of electronic states in the materials due different lattice parameters and different atomic configurations (Ge vs. Si metalloid). The concomitant sign change of R0 and the AMR ratio with temperature observed for the germanide films is discussed in a two-current model indicating an electron-like minority-spin transport at low temperatures.