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Researcher profile

Christoph E. Nebel

Christoph E. Nebel contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

Bulk electronic properties of diamond

A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and n-type doping. Undoped diamond is an insulator with conductivities significantly smaller than 10^-17 Ohmcm at room temperature. Mostly, these insulating films show conductivity activation energies of 1.7 eV, an indication that small amounts of substitutional nitrogen dominates the Fermi-level. The electron and hole mobilities are very high (> 20.000 cm2/Vs at T = 80 K) and are limited by acoustic phonon scattering. By phosphorus and boron doping diamond becomes semiconducting with an n-type donor activation energy (phosphorus) of 600 meV and an acceptor activation energy (boron) of 370 meV. Both dopands are hydrogen-like in nature. Due to the deep donor levels conductivity at room temperature is limited, electronic application will therefore be high-temperature devices. Both, electrons and holes show nearly the same mobilities which is promising for bi-polar applications, however, due to the very different doping levels low temperature devices will be governed by holes with increasing contribution of electrons towards higher temperatures. The effect of temperature on the carrier activation from donors and acceptors, on carrier scattering as well as on transport via hopping is shown in combination with some basic physical models and descriptions. The results confirm the superior electronic properties of diamond which makes it very promising for future electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Diamond for biosensor applications

A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapor deposition (CVD) diamond films is given. The covalently bonded formation of amine- and phenyl-linker molecule layers are characterized using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine- and phenyl-layers are very different with respect to formation, growth, thickness and molecule arrangement. We detect a single molecular layer of amine linker-molecules on diamond with a density of about 1014 cm-2 (10 % of carbon bonds). Amine molecules are bonded only on initially H-terminated surface areas to carbon. In case of electrochemical deposition of phenyl-layers, multi-layer formation is detected due to three dimensional (3D) growths. This gives rise to the formation of typically 25 Å thick layers. The electrochemical grafting of boron doped diamond works on H-terminated and oxidized surfaces. After reacting of such films with heterobifunctional crosslinker-molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and atomic force microscopy on hybridized DNA films show dense arrangements with densities up to 1013 cm-2. The DNA is tilted by an angle of about 35o with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10 minutes cause a decrease of DNA density to about 1012 cm-2. Application of AFM scratching experiments show threshold removal forces around 75 nN for DNA bonded on phenyl linker-molecules and of about 45 nN for DNA bonded to amine linker-molecules. DNA sensor applications using Fe(CN6)3-/4- mediator redox-molecules, impedance spectroscopy and DNA-field effect transistor devices performances are introduced and discussed.

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preprint2020arXiv

Micro- and Nanostructured Diamond in Electrochemistry: Fabrication and Application

The fabrication method of diamond nanostructures can be divided into two categories: top-down etching and bottom-growth. The early work on 3D micro-structured diamond dates back to mid-1990s, using chemical vapor infiltration (CVI) techniques. In this technology, carbon or carbide fibers were typically used as the growth template. Almost in parallel, reactive ion etching (RIE) was applied to achieve diamond surface nanostructuring. After that the diamond surface nanostructures, typically vertically aligned diamond nanowires (or nanorods) has been mainly fabricated using top-down plasma etching techniques. In recent year, the templated diamond growth has gained increasing attention due to the wide choice of template, mask-free production, and unlimited surface enlargement. In this chapter, the development and main techniques used in these two approaches will be elaborated. Nevertheless, other less common methods, such as catalytic etching by metal particles, steam activation and selective materials removal will also be discussed. As indicated by the title, this chapter will mainly deal with the application of micro- and nanostructured diamond in electrochemistry. In these applications, the advantage of nanostructured diamond can be divided into three aspects: 1) providing enlarged surface area for charge storage and catalyst deposition; 2) tip-enhanced electrochemical reactions used in sensing applications; 3) diamond membranes with micro- or nanopores can be applied in the electrochemistry separation and purification applications. Examples and explanations on these applications will be given in this chapter.

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preprint2020arXiv

Surface electronic properties of diamond

Surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions are summarized. The formation of a conductive layer at the surface of diamond is discussed based on Hall effect, conductivity, contact potential difference (CPM), scanning electron microscopy (SEM), and cyclic voltammetry data applied on homoepitaxially grown CVD diamond films with atomically smooth hydrogen terminated surfaces. Due to electron transfer from valence band states into empty states of the electrolyte (transfer doping), a highly conductive surface layer is generated. Holes propagate in the layer with mobilities up to 350 cm2/Vs. The sheet hole density is in the range 10^11 to 5x10^12 cm^-2, and dependents on pH of the electrolyte. Numerical solutions of the Schrodinger and Poisson equations reveal a 2D density of state (DOS) distribution. This has been utilized to manufacture ion-sensitive field effect transistors (ISFET). The drain source conductivity is pH dependent, with about 66 mV/pH. Application of potentials larger than the oxidation threshold of +0.7 V (pH 13) to +1.6 V (pH 1) gives rise to strong leakage currents and to partial surface oxidation.

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