Researcher profile

Christian Glattli

Christian Glattli contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Structure, Energy, and Thermal Transport Properties of Si-SiO$_2$ Nanostructures using an Ab initio based Parameterization of a Charge-Optimized Many-Body Forcefield

In an effort to extend the reach of current ab initio calculations to simulations requiring millions of configurations for complex systems such as heterostructures, we have parameterized the third-generation Charge Optimized Many-Body (COMB3) potential using solely ab initio total energies, forces, and stress tensors as input. The quality and the predictive power of the new forcefield is assessed by computing properties including the cohesive energy and density of SiO$_2$ polymorphs, surface energies of alpha-quartz, and phonon densities of states of crystalline and amorphous phases of SiO$_2$. Comparison with data from experiments, ab initio calculations, and molecular dynamics simulations using published forcefields including BKS (van Beest, Kramer, and van Santen), ReaxFF, and COMB2 demonstrate an overall improvement of the new parameterization. The computed temperature dependence of the thermal conductivity of crystalline alpha-quartz and the Kapitza resistance of the interface between crystalline Si(001) and amorphous silica are in excellent agreement with experiment, setting the stage for simulations of complex nanoscale heterostructures.

preprint2008arXiv

Single Carbon Nanotube Transistor at GHz Frequency

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm of about 20 microSiemens is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/micrometer is typical of top gates on a conventional oxide with a dielectric constant equal to 10. This value is a factor of 3-5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies . For our smallest devices, we find a large transit frequency equal to 50 GHz with no evidence of saturation in length dependence.

preprint2006arXiv

Violation of Kirchhoff's Laws for a Coherent RC Circuit

What is the complex impedance of a fully coherent quantum resistance-capacitance (RC) circuit at GHz frequencies in which a resistor and a capacitor are connected in series? While Kirchhoff's laws predict addition of capacitor and resistor impedances, we report on observation of a different behavior. The resistance, here associated with charge relaxation, differs from the usual transport resistance given by the Landauer formula. In particular, for a single mode conductor, the charge relaxation resistance is half the resistance quantum, regardless of the transmission of the mode. The new mesoscopic effect reported here is relevant for the dynamical regime of all quantum devices.