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Chong Bi

Chong Bi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer

Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeB layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/CoFeB structures and can be detected by using conventional dc multimeters in the absence of lock-in amplifiers. We further demonstrate that the extracted AUMR by excluding thermal contributions shows reversal signs for the CoFeB and NiFe single layers with opposite SHAs, indicating that the AUMR may originate from the self-generated spin accumulation interacting with magnetization through the giant magnetoresistance-like mechanism. These results suggest that the AUMR contributes UMR signals larger than the interfacial spin Hall UMR in the CoFeB-involved systems, providing a convenient and reliable approach to detect in-plane magnetization for the two-terminal spintronic devices.

preprint2014arXiv

Reversible control of Co magnetism by voltage induced oxidation

We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultra-low energy magnetization manipulation in spintronic devices.