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Ching-Hao Chang

Ching-Hao Chang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Electrically Switchable Flat Band in Two-Dimensional Electron Gases under Nonuniform Magnetic Fields

Flat bands are associated with a range of desirable physical phenomena and potential applications, including enhanced superconducting tendencies due to the high density of states, strongly correlated phases such as quantum Hall states. Systems in which flat bands can be switched or tuned are therefore of particular interest. In this study, we analyze the electronic structure of two-dimensional electron gases (2DEGs) subjected to a linearly increasing magnetic-field dipole together with a transverse electric field, using the operator formalism of the quantum harmonic oscillator. When the electric field magnitude is tuned to a sequence of discrete values, different levels of energy bands are flattened. Moreover, at a specific electric field strength, the ground-state wave function admits an exact closed-form solution that can be understood through the magnetic drifts cancellation in the classical electrodynamics. We also demonstrate two distinct transmission properties, the quantized Hall conductance and the enhanced density of states, of the electrically switchable flat band. These findings establish a new route toward magnetoelectric band engineering and electrically guided transport in low-dimensional systems.

preprint2021arXiv

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

The ability to engineer the electronic band structure and, more strikingly, to access new exotic phase of matter has been the cornerstone of the advance of science and technology. Twisting van der Waals materials to form moiré superlattice is a powerful paradigm and can drive graphene from a normal metallic state into an insulating, superconducting, or ferromagnetic states. Here, we present a new route to create non-trivial band structure and consequently an exotic phase of matter via lithographically patterned strain (lattice deformation). This method is used to realize an artificially corrugated bilayer graphene wherein the real-space and momentum-space pseudo-magnetic fields (Berry curvatures) coexist and have nontrivial properties, namely, the Berry curvature dipole. This new class of condensed-matter systems enables us to observe the so-called nonlinear anomalous Hall effect and a new type of Hall effect without breaking the time-reversal symmetry. Such artificial material system and our approach to unconventional electronic states may open an avenue of geometrical and/or topological quantum phenomena as well as that of band engineering in van der Waals crystals.

preprint2020arXiv

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.