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Chiara Ricca

Chiara Ricca contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Photochemical Anisotropy and Direction-dependent Optical Absorption in Semiconductors

Photochemical reactions on semiconductors are anisotropic, since they occur with different rates on surfaces of different orientation. Understanding the origin of this anisotropy is crucial to engineering more efficient photocatalysts. In this work, we use hybrid density functional theory (DFT) to identify the surfaces associated with the largest number of photo-generated carriers in different semiconductors. For each material we create a spherical heat map of the probability of optical transitions at different wave vectors. These maps allow to identify the directions associated with the majority of the photo-generated carriers and can thus be used to make predictions about the most reactive surfaces for photochemical applications. Results indicate that it is generally possible to correlate the heat maps with the anisotropy of the bands observed in conventional band-structure plots, as previously suggested. However, we also demonstrate that conventional bands-structure plots do not always provide all the informations and that taking into account the contribution of all possible transitions weighted by their transition dipole moments is crucial to obtain a complete picture.

preprint2021arXiv

Importance of surface oxygen vacancies for ultrafast hot carrier relaxation and transport in Cu$_2$O

Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate carrier capture processes by oxygen vacancies (V$_\mathrm{O}$) in the experimentally observed ($\sqrt{3} \times \sqrt{3}$)R30$^{\circ}$ reconstruction of the dominant (111) surface. Our results show that these V$_\mathrm{O}$ are doubly ionized and that associated defects states strongly suppress electron transport. In particular, the excited electronic state of a singly charged V$_\mathrm{O}$ plays a crucial role in the non-radiative electron capture process with a capture coefficient of about 10$^{-9}$~cm$^3$/s and a lifetime of 0.04~ps, explaining the experimentally observed ultrafast carrier relaxation. These results highlight that engineering the surface V$_\mathrm{O}$ chemistry will be a crucial step in optimizing Cu$_2$O for photoelectrode applications.

preprint2020arXiv

Local polarization in oxygen-deficient LaMnO$_3$ induced by charge localization in the Jahn-Teller distorted structure

The functional properties of transition metal perovskite oxides are known to result from a complex interplay of magnetism, polarization, strain, and stoichiometry. Here, we show that for materials with a cooperative Jahn-Teller distortion, such as LaMnO$_3$ (LMO), the orbital order can also couple to the defect chemistry and induce novel material properties. At low temperatures, LMO exhibits a strong Jahn-Teller distortion that splits the $e_g$ orbitals of the high-spin Mn$^{3+}$ ions and leads to alternating long, short, and intermediate Mn--O bonds. Our DFT+$U$ calculations show that, as a result of this orbital order, the charge localization in LMO upon oxygen vacancy formation differs from other manganites, like SrMnO$_3$, where the two extra electrons reduce the two Mn sites adjacent to the vacancy. In LMO, relaxations around the defect depend on which type of Mn--O bond is broken, affecting the $d$-orbital energies and leading to asymmetric and hence polar excess-electron localization with respect to the vacancy. Moreover, we show that the Mn--O bond lengths, orbital order and consequently the charge localization and polarity are tunable via strain.

preprint2020arXiv

Self-consistent DFT+$U$+$V$ study of oxygen vacancies in SrTiO$_3$

Contradictory theoretical results for oxygen vacancies in SrTiO$_3$ (STO) were often related to the peculiar properties of STO, which is a $d^0$ transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time, density functional theory (DFT) within the extended Hubbard DFT+$U$+$V$ approach, including on-site as well as inter-site electronic interactions, to study oxygen-deficient STO with Hubbard $U$ and $V$ parameters computed self-consistently via density-functional perturbation theory. Our results demonstrate that the extended Hubbard functional is a promising approach to study defects in materials with electronic properties similar to STO. Indeed, DFT+$U$+$V$ provides a better description of stoichiometric STO compared to standard DFT or DFT+$U$, the band gap and crystal field splitting being in good agreement with experiments. In turn, also the description of the electronic properties of oxygen vacancies in STO is improved, with formation energies in excellent agreement with experiments as well as results obtained with the most frequently used hybrid functionals, however at a fraction of the computational cost. While our results do not fully resolve the contradictory findings reported in literature, our systematic approach leads to a deeper understanding of their origin, which stems from different cell sizes, STO phases, the exchange-correlation functional, and the treatment of structural relaxations and spin-polarization.