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Researcher profile

Chengxian Zhang

Chengxian Zhang contributes to research discovery and scholarly infrastructure.

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quant-phcond-mat.mes-hall

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Published work

5 published item(s)

preprint2023arXiv

Optimizing nonadiabatic geometric quantum gates against off-resonance error by dynamical correction in a silicon-based spin qubit

Geometric quantum gates are performed by using the geometric phase, making them particularly robust to the pulse amplitude error due to the intrinsic global property. However, in many systems, such as the silicon-based spin qubits, the off-resonance error is the dominant noise, which can cause dephasing and is always difficult to deal with for a geometric gate. Thus how to deal with the off-resonance error is very significant for the application of the geometric gates. A recent work in \emph{Phy. Rev. Appl. 16, 044005 (2021)} reveals that by inserting two $π$-pulse dynamically corrected sequences into the evolution paths, the holonomic quantum gate is effective to suppress the pulse amplitude error, however it is still useless for combating the off-resonance error. Inspired by this work, we combine using the techniques of dynamical correction and path design. Surprisingly, we find that by picking up a specific evolution path inserted by only a $π$-pulse dynamically corrected sequence, the obtained optimized geometric gate is robust to the off-resonance error, assuming the noise is static. Further, by calculating the filter function considering the realistic $1/f$-type noise in silicon, the related results show that the performance of the optimized geometric gate can also surpass both the conventional geometric gate and the naive dynamical gate constructed without using the geometric phase. Our results indicate dynamical correction is an powerful tool to improve the geometric gate.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coupling two charge qubits via a superconducting resonator operating in the resonant and dispersive regimes

A key challenge for semiconductor quantum-dot charge qubits is the realization of long-range qubit coupling and performing high-fidelity gates based on it. Here, we describe a new type of charge qubit formed by an electron confined in a triple-quantum-dot system, enabling single and two-qubit gates working in the dipolar and quadrupolar detuning sweet spots. We further present the form for the long-range dipolar coupling between the charge qubit and the superconducting resonator. Based on the hybrid system composed of the qubits and the resonator, we present two types of entangling gates: the dynamical iSWAP gate and holonomic entangling gate, which are operating in the dispersive and resonant regimes, respectively. We find that the fidelity for the iSWAP gate can reach fidelity higher than 99\% for the noise level typical in experiments. Meanwhile, the fidelity for the holonomic gate can surpass 98\% if the anharmonicity in the resonator is large enough. Our proposal offers an alternative useful way to build up high-fidelity quantum computation for charge qubits in semiconductor quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Experimental study of secure quantum key distribution with source and detection imperfections

The quantum key distribution (QKD), guaranteed by the principle of quantum physics, is a promising solution for future secure information and communication technology. However, device imperfections compromise the security of real-life QKD systems, restricting the wide deployment of QKD. This study reports a decoy-state BB84 QKD experiment that considers both source and detection imperfections. In particular, we achieved a rigorous finite-key security bound over fiber links of up to 75 km by applying a systematic performance analysis. Furthermore, our study considers more device imperfections than most previous experiments, and the proposed theory can be extended to other discrete-variable QKD systems. These features constitute a crucial step toward securing QKD with imperfect practical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fast high-fidelity geometric gates for singlet-triplet qubits

Geometric gates that use the global property of the geometric phase is believed to be a powerful tool to realize fault-tolerant quantum computation. However, for singlet-triplet qubits in semiconductor quantum dot, the low Rabi frequency of the microwave control leads to overly long gating time, and thus the constructing geometric gate suffers more from the decoherence effect. Here we investigate the key issue of whether the fast geometric gate can be realized for singlet-triplet qubits without introducing an extra microwave-driven pulse, while maintaining the high-fidelity gate operation at the same time. We surprisingly find that both the single- and two-qubit geometric gates can be implemented via only modulating the time-dependent exchange interaction of the Hamiltonian, which can typically be on the order of $\sim$GHz, and thus the corresponding gate time is of several nanoseconds. Furthermore, the obtained geometric gates are superior to their counterparts, i.e., the conventional dynamical gates for singlet-triplet qubits, with a relatively high fidelity surpassing $99\%$. Therefore our scheme is particularly applied to singlet-triplet qubits to obtain fast and high-fidelity geometric gates. Our scheme can also be extended to other systems without a microwave drive.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-fidelity geometric gate for silicon-based spin qubits

High-fidelity manipulation is the key for the physical realization of fault-tolerant quantum computation. Here, we present a protocol to realize universal nonadiabatic geometric gates for silicon-based spin qubits. We find that the advantage of geometric gates over dynamical gates depends crucially on the evolution loop for the construction of the geometric phase. Under appropriate evolution loops, both the geometric single-qubit gates and the CNOT gate can outperform their dynamical counterparts for both systematic and detuning noises. We also perform randomized benchmarking using noise amplitudes consistent with experiments in silicon. For the static noise model, the averaged fidelities of geometric gates are around 99.90\% or above, while for the time-dependent $1/f$-type noise, the fidelities are around 99.98\% when only the detuning noise is present. We also show that the improvement in fidelities of the geometric gates over dynamical ones typically increases with the exponent $α$ of the $1/f$ noise, and the ratio can be as high as 4 when $α\approx 3$. Our results suggest that geometric gates with judiciously chosen evolution loops can be a powerful way to realize high-fidelity quantum gates.

0 citations0 reviewsNo code linkedOpen access