BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Cheng-Wei Lee

Cheng-Wei Lee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phquant-ph

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2022arXiv

Electron dynamics in extended systems within real-time time-dependent density functional theory

Due to a beneficial balance of computational cost and accuracy, real-time time-dependent density functional theory has emerged as a promising first-principles framework to describe electron real-time dynamics. Here we discuss recent implementations around this approach, in particular in the context of complex, extended systems. Results include an analysis of the computational cost associated with numerical propagation and when using absorbing boundary conditions. We extensively explore the shortcomings for describing electron-electron scattering in real time and compare to many-body perturbation theory. Modern improvements of the description of exchange and correlation are reviewed. In this work, we specifically focus on the Qb@ll code, which we have mainly used for these types of simulations over the last years, and we conclude by pointing to further progress needed going forward.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large breakdown field, allowing high operating voltages. Currently explored WBG materials for power electronics are costly (GaN), difficult to synthesize as high-quality single crystals (SiC) and at scale (diamond, BN), have low thermal conductivity ($β$-Ga$_2$O$_3$), or cannot be suitably doped (AlN). We conduct a computational search for novel semiconductors across 1,340 known metal-oxides using first-principles calculations and existing transport models. We calculate the Baliga figure of merit (BFOM) and lattice thermal conductivity ($κ_L$) to identify top candidates for n-type power electronics. We find 40 mostly ternary oxides that have higher $κ_L$ than $β$-Ga$_2$O$_3$ and higher n-type BFOM than SiC and GaN. Among these, several material classes emerge, including 2-2-7 stoichiometry thortveitites and pyrochlores, II-IV spinels, and calcite-type borates. Within these classes, we propose In$_2$Ge$_2$O$_7$, Mg$_2$GeO$_4$, and InBO$_3$ as they are the most favorable for n-type doping based on our preliminary evaluation and could be grown as single crystals or thin film heterostructures. These materials could help advance power electronic devices for the future grid.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3$d$ series that considers generalized Koopmans' condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet-triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multi-scale simulations of electron and ion dynamics in self-irradiated silicon

The interaction of energetic ions with the electronic and ionic system of target materials is an interesting but challenging multi-scale problem and understanding of the early stages after impact of heavy, initially charged ions is particularly poor. At the same time, energy deposition during these early stages determines later formation of damage cascades. We address the multi-scale character by combining real-time time-dependent density functional theory for electron dynamics with molecular dynamics simulations of damage cascades. Our first-principles simulations prove that core electrons affect electronic stopping and have an unexpected influence on the charge state of the projectile. We show that this effect is absent for light projectiles, but dominates the stopping physics for heavy projectiles. By parameterizing an inelastic energy loss friction term in the molecular dynamics simulations using our first-principles results, we also show a qualitative influence of electronic stopping physics on radiation-damage cascades.

0 citations0 reviewsNo code linkedOpen access