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Chao-Long Yang

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cond-mat.mtrl-sci cond-mat.mes-hall physics.chem-ph

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preprint2016arXiv

Real-space characterization of reactivity towards water at Bi2Te3(111) surface

Surface reactivity is important in modifying the physical and chemical properties of surface sensitive materials, such as the topological insulators (TIs). Even though many studies addressing the reactivity of TIs towards external gases have been reported, it is still under heavy debate whether and how the topological insulators react with H $_2$ O. Here, we employ scanning tunneling microscopy (STM) to directly probe the surface reaction of Bi $_2$ Te $_3$ towards H $_2$ O. Surprisingly, it is found that only the top quintuple layer is reactive to H $_2$ O, resulting in a hydrated Bi bilayer as well as some Bi islands, which passivate the surface and prevent from the subsequent reaction. A reaction mechanism is proposed with H $_2$ Te and hydrated Bi as the products. Unexpectedly, our study indicates the reaction with water is intrinsic and not dependent on any surface defects. Since water inevitably exists, these findings provide key information when considering the reactions of Bi $_2$ Te $_3$ with residual gases or atmosphere.

preprint2016arXiv

Robust topological edge states at the perfect surface step edge of topological insulator ZrTe $_5$

We report an atomic-scale characterization of ZrTe $_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe $_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe $_5$ be a potential candidate for future fundamental studies and device applications.

preprint2016arXiv

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Heteroepitaxial structures based on Bi $_{2}$ Te $_{3}$ -type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the Bi $_{2}$ Te $_{3}$ (111) surface can be modified by the engineering local strain, ε, which is induced around the point-like defects intrinsically forming in the Bi $_{2}$ Te $_{3}$ (111) thin film grown on a Si(111)-7 $\times$ 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier E $_{d}$ of Pb adatom on Bi $_{2}$ Te $_{3}$ (111) surface show a significant influence of ε. Surprisingly, E $_d$ reveals a cusp-like dependence on ε due to a bifurcation in the position of the stable adsorption site at the critical tensile strain ε $_{c}$ $\approx$ 0.8%. This constitutes a very different strain-dependence of diffusivity from all previous studies focusing on conventional metal or semiconductor surfaces. Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversible aggregation incorporating the DFT results reveal adatom and cluster distributions compatible with our experimental observations.

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Chao-Long Yang

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3 publications

Real-space characterization of reactivity towards water at Bi2Te3(111) surface

Robust topological edge states at the perfect surface step edge of topological insulator ZrTe $_5$

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

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Chao-Long Yang

Research overview

Is this your work?

3 publications

Real-space characterization of reactivity towards water at Bi2Te3(111) surface

Robust topological edge states at the perfect surface step edge of topological insulator ZrTe5_55​

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

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Robust topological edge states at the perfect surface step edge of topological insulator ZrTe $_5$