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Researcher profile

Cenk Yanik

Cenk Yanik contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallphysics.app-ph

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Published work

2 published item(s)

preprint2021arXiv

Strong localization in a suspended monolayer graphene by intervalley scattering

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\approx0.4~T$ accompanied by broken-symmetry-induced $ν=0,\pm1$ plateaux confirms the presence of intervalley scatterers.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Full Electrostatic Control of Nanomechanical Buckling

Buckling at the micro and nanoscale generates distant bistable states which can be beneficial for sensing, shape-reconfiguration and mechanical computation applications. Although different approaches have been developed to access buckling at small scales, such as the use heating or pre-stressing beams, very little attention has been paid so far to dynamically and precisely control all the critical bifurcation parameters, the compressive stress and the lateral force on the beam. Precise and on-demand generation of compressive stress on individually addressable microstructures is especially critical for morphologically reconfigurable devices. Here, we develop an all-electrostatic architecture to control the compressive force, as well as the direction and amount of buckling, without significant heat generation on micro/nano structures. With this architecture, we demonstrated fundamental aspects of device function and dynamics. By applying voltages at any of the digital electronics standards, we have controlled the direction of buckling. Lateral deflections as large as 12% of the beam length were achieved. By modulating the compressive stress and lateral electrostatic force acting on the beam, we tuned the potential energy barrier between the post-bifurcation stable states and characterized snap-through transitions between these states. The proposed architecture opens avenues for further studies that can enable efficient actuators and multiplexed shape-shifting devices.

0 citations0 reviewsNo code linkedOpen access