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Cenk Yanik

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2021arXiv

Strong localization in a suspended monolayer graphene by intervalley scattering

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\approx0.4~T$ accompanied by broken-symmetry-induced $ν=0,\pm1$ plateaux confirms the presence of intervalley scatterers.

preprint2019arXiv

Full Electrostatic Control of Nanomechanical Buckling

Buckling at the micro and nanoscale generates distant bistable states which can be beneficial for sensing, shape-reconfiguration and mechanical computation applications. Although different approaches have been developed to access buckling at small scales, such as the use heating or pre-stressing beams, very little attention has been paid so far to dynamically and precisely control all the critical bifurcation parameters, the compressive stress and the lateral force on the beam. Precise and on-demand generation of compressive stress on individually addressable microstructures is especially critical for morphologically reconfigurable devices. Here, we develop an all-electrostatic architecture to control the compressive force, as well as the direction and amount of buckling, without significant heat generation on micro/nano structures. With this architecture, we demonstrated fundamental aspects of device function and dynamics. By applying voltages at any of the digital electronics standards, we have controlled the direction of buckling. Lateral deflections as large as 12% of the beam length were achieved. By modulating the compressive stress and lateral electrostatic force acting on the beam, we tuned the potential energy barrier between the post-bifurcation stable states and characterized snap-through transitions between these states. The proposed architecture opens avenues for further studies that can enable efficient actuators and multiplexed shape-shifting devices.

preprint2013arXiv

Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices

We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal resistance increases monotonously with the current. Then a collapse in the quantized resistance occurs while longitudinal resistance keeps its gradual increase. The exponential increase of the conductivity with respect to the current suggests impurity mediated inter-Landau level scattering as the mechanism of the breakdown. The results are interpreted as the strong variation of the breakdown behavior throughout the sample due to the randomly distributed scattering centers that mediates the breakdown.