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Ce Hu

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Published work

3 published item(s)

preprint2020arXiv

Accelerating Atomistic Simulations with Piecewise Machine Learned Ab Initio Potentials at Classical Force Field-like Cost

Machine learning methods have nowadays become easy-to-use tools for constructing high-dimensional interatomic potentials with ab initio accuracy. Although machine learned interatomic potentials are generally orders of magnitude faster than first-principles calculations, they remain much slower than classical force fields, at the price of using more complex structural descriptors. To bridge this efficiency gap, we propose an embedded atom neural network approach with simple piecewise switching function based descriptors, resulting in a favorable linear scaling with the number of neighbor atoms. Numerical examples validate that this piecewise machine learning model can be over an order of magnitude faster than various popular machine learned potentials with comparable accuracy for both metallic and covalent materials, approaching the speed of the fastest embedded atom method (i.e. several μs/atom per CPU core). The extreme efficiency of this approach promises its potential in first-principles atomistic simulations of very large systems and/or in long timescale.

preprint2020arXiv

Efficient and Accurate Simulations of Vibrational and Electronic Spectra with Symmetry-Preserving Neural Network Models for Tensorial Properties

Machine learning has revolutionized the high-dimensional representations for molecular properties such as potential energy. However, there are scarce machine learning models targeting tensorial properties, which are rotationally covariant. Here, we propose tensorial neural network (NN) models to learn both tensorial response and transition properties, in which atomic coordinate vectors are multiplied with scalar NN outputs or their derivatives to preserve the rotationally covariant symmetry. This strategy keeps structural descriptors symmetry invariant so that the resulting tensorial NN models are as efficient as their scalar counterparts. We validate the performance and universality of this approach by learning response properties of water oligomers and liquid water, and transition dipole moment of a model structural unit of proteins. Machine learned tensorial models have enabled efficient simulations of vibrational spectra of liquid water and ultraviolet spectra of realistic proteins, promising feasible and accurate spectroscopic simulations for biomolecules and materials.

preprint2020arXiv

Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. Here, we demonstrate TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics: forward rectifying, Zener-tunneling and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ~ 0.2V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.