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Carsten Richter

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2 publications

preprint2022arXiv

Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 ceramics

Environmentally benign (1-x)Ba(Ti0.8_{0.8}Zr0.2_{0.2})O3_3-x(Ba0.7_{0.7}Ca0.3_{0.3})TiO3_3 (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structure property relationship in the tetragonal BZT-BCT ceramic. During high-temperature cubic to tetragonal phase transformation, polar nanoregions are manifested through the spontaneous volume ferroelectrostriction at temperatures below ∼\sim 477 K. Temperature-dependent local structural investigations across the Zr K edge extended x-ray absorption fine structure spectroscopy reveal an anomalous collaboration between the ZrO6_{6} and TiO6_6 octahedra. These octahedra compromise their individuality during polarization development. The presence of domains of submicron size embedded inside the macroscopic ferroelectric regions below Tm_{m}, as well as their hierarchical arrangement, is observed by piezo-response force microscopy. Effects of the existence of the structural/polar heterogeneities below Tm_{m} are observed also when polarizibilities of the poled and the unpoled samples are compared; the poled sample is found to be more susceptible to the electric field. In addition, by using electric field dependent x-ray diffraction studies we also show that this ceramic under field exhibits reduction of tetragonal distortion, which is consistent with earlier reports.

preprint2022arXiv

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed Inx_xGa1−x_{1-x}N layers by scanning X-ray diffraction microscopy

Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned Inx_xGa1−x_{1-x}N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed.

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