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Source author record

Caio Lewenkopf

Caio Lewenkopf appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scigr-qchep-th

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Published work

10 published item(s)

preprint2022arXiv

Local equilibrium charge and spin currents in two-dimensional topological systems

We study the equilibrium and nonequilibrium electronic transport properties of multiprobe topological systems using a combination of the Landauer-Büttiker approach and nonequilibrium Green's functions techniques. We obtain general expressions for both nonequilibrium and equilibrium local electronic currents that, by suitable projections, allow one to compute charge, spin, valley, and orbital currents. We show that external magnetic fields give rise to equilibrium charge currents in mesoscopic system and study the latter in the quantum Hall regime. Likewise, a spin-orbit interaction leads to local equilibrium spin currents, that we analyze in the quantum spin Hall regime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene

The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and electronic properties of realistic two-dimensional amorphous topological insulators

We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a $2e^2/h$ conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by 60 degrees, we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green's function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Impurity invisibility in graphene: Symmetry guidelines for the design of efficient sensors

Renowned for its sensitivity to detect the presence of numerous substances, graphene is an excellent chemical sensor. Unfortunately, which general features a dopant must have in order to enter the list of substances detectable by graphene are not exactly known. Here we demonstrate with a simple model calculation implemented in three different ways that one of such features is the symmetry properties of the impurity binding to graphene. In particular, we show that electronic scattering is suppressed when dopants are bound symmetrically to both graphene sub-lattices, giving rise to impurity invisibility. In contrast, dopants that affect the two sublattices asymmetrically are more strongly scattered and therefore the most likely candidates to being chemically sensed by graphene. Furthermore, we demonstrate that impurity invisibility is lifted with the introduction of a symmetry-breaking perturbation such as uniaxial strain. In this case, graphene with sublattice-symmetric dopants will function as efficient strain sensors. We argue that by classifying dopants through their bonding symmetry leads to a more efficient way of identifying suitable components for graphene-based sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Weiss oscillations in graphene with a modulated height profile

We study the electronic transport properties of a monolayer graphene with a one-dimensional modulated height profile caused, for instance, by substrate ondulations. We show that the combined effect of the resulting strain fields induce modulated scalar and vector potentials that give rise to Weiss oscillations in the magnetoconductivity. We also find that similar effects can be obtained by applying a parallel magnetic field to the graphene-substrate interface. The parameters of an experimental set-up for a physical realization of these findings in graphene systems are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gauge fields in graphene with nonuniform elastic deformations: A quantum field theory approach

We investigate the low energy continuum limit theory for electrons in a graphene sheet under strain. We use the quantum field theory in curved spaces to analyze the effect of the system deformations into an effective gauge field. We study both in-plane and out-of-plane deformations and obtain a closed expression for the effective gauge field due to arbitrary nonuniform sheet deformations. The obtained results reveal a remarkable relation between the local-pseudo magnetic field and the Riemann curvature, so far overlooked.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Random gauge field effects on the conductivity of graphene sheets with disordered ripples

We study the effect of disordered ripples on the conductivity of monolayer graphene flakes. We calculate the relaxation times and the Boltzmann conductivities associated with two mechanisms. First, we study the conductivity correction due to an external in-plane magnetic field $B_\parallel$. Due to the irregular local curvature found at graphene sheets deposited over a substrate, $B_\parallel$ can be mapped into an effective random magnetic field perpendicular to the graphene surface. Second, we study the electron momentum relaxation due to intrinsic pseudo magnetic fields originated from deformations and strain. We find that the competition between these mechanisms gives rise to a strong anisotropy in the conductivity tensor. This result provides a new strategy to quantitatively infer the strength of pseudo-magnetic fields in rippled graphene flakes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Semiclassical magnetotransport in graphene n-p junctions

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. This framework is known to experimentally exhibit conductance plateaus whose origin is still not fully understood. In the magnetic regime (E < vF B), we show the conductance of excited states is essentially zero, while that of the ground state depends on the boundary conditions considered at the edge of the sample. In the electric regime (E > vF B), for a step-like electrostatic potential (abrupt on the scale of the magnetic length), we derive a semiclassical approximation for the conductance in terms of the various snake-like trajectories at the interface of the junction. For a symmetric configuration, the general result can be recovered using a simple scattering approach, providing a transparent analysis of the problem under study. We thoroughly discuss the semiclassical predicted behavior for the conductance and conclude that any approach using fully phase-coherent electrons will hardly account for the experimentally observed plateaus.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene n-p junction in a strong magnetic field: a semiclassical study

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at the interface of the junction. For a symmetric (ambipolar) configuration, the general result can be recovered by means of a simple scattering approach, providing a very transparent qualitative description of the problem under study. Consequences of our findings for the understanding of recent experiments are discussed.

0 citations0 reviewsNo code linkedOpen access