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Source author record

C. Z. Gu

C. Z. Gu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

5 published item(s)

preprint2014arXiv

Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer

A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Edge superconducting state in Nb thin film with rectangular arrays of antidots

Superconducting Nb thin films with rectangular arrays of submicron antidots have been systemically investigated by transport measurements. In low fields, the magnetoresistance curves demonstrate well-defined dips at integral and rational numbers of flux quanta per unit cell, which corresponds to a superconducting wire network-like regime. When the magnetic field is higher than a saturation field, interstitial vortices interrupt the collective oscillation in low fields and form vortex sublattice, where a larger magnetic field interval is observed. In higher fields, a crossover behavior from the interstitial sublattice state to a single-loop-like state is observed, characterized by oscillations with a period of $Φ_0/πr_{eff}^2$, originating from the existence of edge superconducting states with a size $r_{eff}$ around the antidots.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Measurements on Nano-engineered Two Dimensional Superconducting Wire Networks

Superconducting triangular Nb wire networks with high normal-state resistance are fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist. Robust magnetoresistance oscillations are observed up to high magnetic fields and maintained at low temperatures, due to the eective reduction of wire dimensions. Well-defined dips appear at integral and rational values (1/2, 1/3, 1/4) of the reduced flux f = Phi/Phi_0, which is the first observation in the triangular wire networks. These results are well consistent with theoretical calculations for the reduced critical temperature as a function of f.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Wire network behavior in superconducting Nb films with diluted triangular arrays of holes

We present transport measurement results on superconducting Nb films with diluted triangular arrays (honeycomb and kagomé) of holes. The patterned films have large disk-shaped interstitial regions even when the edge-to-edge separations between nearest neighboring holes are comparable to the coherence length. Changes in the field interval of two consecutive minima in the field dependent resistance $R(H)$ curves are observed. In the low field region, fine structures in the $R(H)$ and $T_c(H)$ curves are identified in both arrays. Comparison of experimental data with calculation results shows that these structures observed in honeycomb and kagomé hole arrays resemble those in wire networks with triangular and $T_3$ symmetries, respectively. Our findings suggest that even in these specified periodic hole arrays with very large interstitial regions, the low field fine structures are determined by the connectivity of the arrays

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preprint2006arXiv

Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.

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