Source author record

C. Wild

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

Catalog footprint

Research overview

4works
1topics
4close collaborators

Published work

4 publications

preprint2026arXiv

Evidence for the rare decay B+→Λˉpμ+μ−B^{+} \to \bar Λp μ^{+} μ^{-}

A search for the rare decay B+→Λˉpμ+μ−B^{+} \to \bar Λp μ^{+} μ^{-} is performed using proton-proton collision data recorded by the LHCb experiment at a center-of-mass energy of s=13\sqrt{s}= 13 TeV, corresponding to an integrated luminosity of 5.4 fb−1^-1. An excess of events is found with respect to the background-only expectation, with a signal significance of 3.5 standard deviations, in the low invariant-mass region of m(Λˉp)<2.8m(\bar Λp)<2.8 GeV/c2c^2. The branching fraction is measured to be Blow(B+→Λˉpμ+μ−)=(1.70−0.56+0.65(stat)±0.17(syst)±0.14(ext))×10−8{\cal B}_{\rm low}({B^{+}}\to {\bar Λp μ^{+} μ^{-}})=\left(1.70 ^{+0.65}_{-0.56}(\rm stat) \pm 0.17(\rm syst) \pm 0.14(\rm ext)\right) \times 10^{-8}, where the last uncertainty is due to external inputs on B(B+→J/ψΛˉp)×B(J/ψ→μ+μ−){\cal B}(B^+\to{J/ψ\bar Λp})\times {\cal B}({J/ψ}\to{μ^+μ^-}). With no significant signal observed in the high m(Λˉp)m(\bar Λp) region above 2.8 GeV/c2c^2, an upper limit is set to be Bhigh(B+→Λˉpμ+μ−)<2.8 (3.7)×10−9{\cal B}_{\rm high}(B^{+}\to {\bar Λp μ^{+} μ^{-}})<2.8\,(3.7) \times 10^{-9} at the 90%90\% (95%95\%) confidence level.

preprint2026arXiv

Search for lepton-number-violating B−→D(∗)+μ−μ−B^-\to D^{(*)+}μ^-μ^- decays

A search is performed for lepton-number-violating B−→D(∗)+μ−μ−B^-\to D^{(*)+}μ^-μ^- decays, using data collected by the LHCb experiment in proton-proton collisions at a center-of-mass energy of 13 TeV, corresponding to an integrated luminosity of 5.4 fb−1^{-1}. No significant signal is observed, and upper limits are set on the branching fractions, B(B−→D+μ−μ−)<4.6×10−8{\cal B}(B^-\to D^{+}μ^-μ^-) < 4.6 \times 10^{-8} and B(B−→D∗+μ−μ−)<5.9×10−8{\cal B}(B^-\to D^{*+}μ^-μ^-) < 5.9 \times 10^{-8}, at the 95% confidence level.

preprint2026arXiv

Study of charm mixing and CP violation with D0→K±π∓π±π∓D^0\to K^\pmπ^\mpπ^\pmπ^\mp decays

A study of charm mixing and CP violation in D0→K±π∓π±π∓D^0\to K^\pmπ^\mpπ^\pmπ^\mp decays is performed using data collected by the LHCb experiment in proton-proton collisions from 2015 to 2018, corresponding to an integrated luminosity of 6fb−1\text{fb}^{-1}. The ratio of promptly produced D0→K+π−π+π−D^0\to K^+π^- π^+π^- to D0→K−π+π−π+D^0\to K^-π^+ π^-π^+ decay rates is measured as a function of D0D^0 decay time, both inclusive over phase space and in bins of phase space. Taking external inputs for the D0−D‾0D^0 -\overline{D}^0 mixing parameters xx and yy allows constraints to be obtained on the hadronic parameters of the charm decay. When combined with previous measurements from charm-threshold experiments and at LHCb, improved knowledge is obtained for these parameters, which is valuable for studies of the angle γγ of the Unitarity Triangle. An alternative analysis is also performed, in which external inputs are taken for the hadronic parameters, and the mixing parameters are determined, including ΔxΔx and ΔyΔy, which are nonzero in the presence of CP violation. It is found that x=(0.85−0.24+0.15)%x=\left(0.85^{+0.15}_{-0.24}\right)\%, y=(0.21+0.29−0.27)%y=\left( 0.21^{+0.29}{-0.27} \right)\%, Δx=(−0.02±0.04)%Δx=\left( -0.02\pm {0.04} \right)\% and Δy=(0.02−0.03+0.04)%Δy=\left( 0.02^{+0.04}_{-0.03} \right)\%. These results are consistent with previous measurements and the hypothesis of CP conservation.

preprint2020arXiv

Optical properties of silicon-implanted polycrystalline diamond membranes

We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystal along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of silicon in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.