Source author record

C. W. Groth

C. W. Groth appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

Transmission probability through a Lévy glass and comparison with a Lévy walk

Recent experiments on the propagation of light over a distance L through a random packing of spheres with a power law distribution of radii (a socalled Lévy glass) have found that the transmission probability T \propto 1/L^γ scales superdiffusively (γ < 1). The data has been interpreted in terms of a Lévy walk. We present computer simulations to demonstrate that diffusive scaling (γ \approx 1) can coexist with a divergent second moment of the step size distribution (p(s) \propto 1/s^(1+α) with α < 2). This finding is in accord with analytical predictions for the effect of step size correlations, but deviates from what one would expect for a Lévy walk of independent steps.

preprint2009arXiv

Theory of the topological Anderson insulator

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p^2 sigma_z to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.