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C. Simserides

C. Simserides contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2016arXiv

Electronic structure and carrier transfer in B-DNA monomer polymers and dimer polymers: Stationary and time-dependent aspects of wire model vs. extended ladder model

We employ two Tight-Binding (TB) approaches to study the electronic structure and hole or electron transfer in B-DNA monomer polymers and dimer polymers made up of $N$ monomers (base pairs): (I) at the base-pair level, using the on-site energies of base pairs and the hopping integrals between successive base pairs, i.e., a wire model and (II) at the single-base level, using the on-site energies of the bases and the hopping integrals between neighboring bases, i.e., an \textit{extended} ladder model since we also include diagonal hoppings. We solve a system of $MD$ ("matrix dimension") coupled equations [(I) $MD$ = $N$, (II) $MD$ = $2N$] for the time-independent problem, and a system of $MD$ coupled $1^\text{st}$ order differential equations for the time-dependent problem. We study the HOMO and the LUMO eigenspectra, the occupation probabilities, the Density of States (DOS) and the HOMO-LUMO gap as well as the mean over time probabilities to find the carrier at each site [(I) base pair or (II) base)], the Fourier spectra, which reflect the frequency content of charge transfer (CT) and the pure mean transfer rates from a certain site to another. The two TB approaches give coherent, complementary aspects of electronic properties and charge transfer in B-DNA monomer polymers and dimer polymers.

preprint2016arXiv

Wire and extended ladder model predict THz oscillations in DNA monomers, dimers and trimers

We call \textit{monomer} a B-DNA base pair and study, analytically and numerically, electron or hole oscillations in \textit{monomers}, \textit{dimers} and \textit{trimers}. We employ two Tight Binding (TB) approaches: (I) at the base-pair level, using the on-site energies of the base pairs and the hopping parameters between successive base pairs i.e. \textit{a wire model}, and (II) at the single-base level, using the on-site energies of the bases and the hopping parameters between neighbouring bases, specifically between (a) two successive bases in the same strand, (b) complementary bases that define a base pair, and (c) diagonally located bases of successive base pairs, i.e. \textit{an extended ladder model} since it also includes the diagonal hoppings (c). For \textit{monomers}, with TB II, we predict periodic carrier oscillations with frequency $f \approx$ 50-550 THz. For \textit{dimers}, with TB I, we predict periodic carrier oscillations with $f \approx$ 0.25-100 THz. For \textit{trimers made of identical monomers}, with TB I, we predict periodic carrier oscillations with $f \approx$ 0.5-33 THz. In other cases, either with TB I or TB II, the oscillations may be not strictly periodic, but Fourier analysis shows similar frequency content. For dimers and trimers, TB I and TB II are successfully compared giving complementary aspects of the oscillations.

preprint2013arXiv

Phase diagram and critical behavior of the random ferromagnet $Ga_{1-x}Mn_xN$

Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong deviations from the magnetically clean case (x = 1), in particular, (i) an apparent breakdown of the Harris criterion; (ii) a non-monotonic crossover in the values of the susceptibility critical exponent gamma_eff between the high temperature and critical regimes, and (iii) a smearing of the critical region, which can be explained either by the Griffiths effects or by macroscopic inhomogeneities in the spin distribution with a variance Delta x = (0.2 +/- 0.1)%.

preprint2013arXiv

Reducing influence of antiferromagnetic interactions on ferromagnetic properties of p-(Cd,Mn)Te quantum wells

In order to explain the absence of hysteresis in ferromagnetic p-type (Cd,Mn)Te quantum wells (QWs), spin dynamics was previously investigated by Monte Carlo simulations combining the Metropolis algorithm with the determination of hole eigenfunctions at each Monte Carlo sweep. Short-range antiferromagnetic superexchange interactions between Mn spins - which compete with the hole-mediated long-range ferromagnetic coupling - were found to accelerate magnetization dynamics if the the layer containing Mn spins is wider than the vertical range of the hole wave function. Employing this approach it is shown here that appreciate magnitudes of remanence and coercivity can be obtained if Mn ions are introduced to the quantum well in a delta-like fashion.

preprint2013arXiv

Theory of ferromagnetism driven by superexchange in dilute magnetic semiconductors

Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th cation coordination sphere in zinc-blende GaN. It is shown that for a set of experimentally determined input parameters there are no itinerant carriers and the coupling between localized Mn$^{3+}$ spins in GaN proceeds via superexchange that is ferromagnetic for all explored $R_{ij}$ values. Extensive Monte Carlo simulations serve to evaluate the magnitudes of Curie temperature $T_\mathrm{C}$ by the cumulant crossing method. The theoretical values of $T_\mathrm{C}(x)$ are in quantitative agreement with the experimental data that are available for Ga$_{1-x}$Mn$_x$N with randomly distributed Mn$^{3+}$ ions with the concentrations $0.01 \leq x \leq 0.1$.

preprint2012arXiv

Origin of low-temperature magnetic ordering in Ga1-xMnxN

By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators.

preprint2009arXiv

Ferromagnetic properties of p-(Cd,Mn)Te quantum wells: Interpretation of magneto-optical measurements by Monte Carlo simulations

In order to single out dominant phenomena that account for carrier-controlled magnetism in p-(Cd,Mn)Te quantum wells we have carried out magneto-optical measurements and Monte Carlo simulations of time dependent magnetization. The experimental results show that magnetization relaxation is faster than 20 ns in the paramagnetic state. Decreasing temperature below the Curie temperature Tc results in an increase of the relaxation time but to less than 10 micro seconds. This fast relaxation may explain why the spontaneous spin splitting of electronic states is not accompanied by the presence of non-zero macroscopic magnetization below Tc. Our Monte Carlo results reproduce the relative change of the relaxation time on decreasing temperature. At the same time, the numerical calculations demonstrate that antiferromagnetic spin-spin interactions, which compete with the hole-mediated long-range ferromagnetic coupling, play an important role in magnetization relaxation of the system. We find, in particular, that magnetization dynamics is largely accelerated by the presence of antiferromagnetic couplings to the Mn spins located outside the region, where the holes reside. This suggests that macroscopic spontaneous magnetization should be observable if the thickness of the layer containing localized spins will be smaller than the extension of the hole wave function. Furthermore, we study how a spin-independent part of the Mn potential affects Tc. Our findings show that the alloy disorder potential tends to reduce Tc, the effect being particularly strong for the attractive potential that leads to hole localization.

preprint2009arXiv

Tight-binding parameters for charge transfer along DNA

We systematically examine all the tight-binding parameters pertinent to charge transfer along DNA. The $π$ molecular structure of the four DNA bases (adenine, thymine, cytosine, and guanine) is investigated by using the linear combination of atomic orbitals method with a recently introduced parametrization. The HOMO and LUMO wavefunctions and energies of DNA bases are discussed and then used for calculating the corresponding wavefunctions of the two B-DNA base-pairs (adenine-thymine and guanine-cytosine). The obtained HOMO and LUMO energies of the bases are in good agreement with available experimental values. Our results are then used for estimating the complete set of charge transfer parameters between neighboring bases and also between successive base-pairs, considering all possible combinations between them, for both electrons and holes. The calculated microscopic quantities can be used in mesoscopic theoretical models of electron or hole transfer along the DNA double helix, as they provide the necessary parameters for a tight-binding phenomenological description based on the $π$ molecular overlap. We find that usually the hopping parameters for holes are higher in magnitude compared to the ones for electrons, which probably indicates that hole transport along DNA is more favorable than electron transport. Our findings are also compared with existing calculations from first principles.

preprint2000arXiv

Density of states and electron concentration of double heterojunctions subjected to an in-plane magnetic field

We calculate the electronic states of Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As double heterojunctions subjected to a magnetic field parallel to the quasi two-dimensional electron gas. We study the energy dispersion curves, the density of states, the electron concentration and the distribution of the electrons in the subbands. The parallel magnetic field induces severe changes in the density of states, which are of crucial importance for the explanation of the magnetoconductivity in these structures. However, to our knowledge, there is no systematic study of the density of states under these circumstances. We attempt a contribution in this direction. For symmetric heterostructures, the depopulation of the higher subbands, the transition from a single to a bilayer electron system and the domination of the bulk Landau levels in the centre the wide quantum well, as the magnetic field is continuously increased, are presented in the ``energy dispersion picture'' as well as in the ``electron concentration picture'' and in the ``density of states picture''.